2N5012-Transistor by ON Semiconductor | NPN Transistor | TO-39 Metal Can Package

2N5012-Transistor Overview

The 2N5012 transistor is a high-voltage NPN bipolar junction transistor designed for medium power amplification and switching applications. It features a maximum collector-emitter voltage (V_CEO) of 160V and a collector current (I_C) capability up to 600mA, making it suitable for industrial and consumer electronic circuits requiring reliable performance under moderately high voltage conditions. Its robust breakdown voltages and stable gain characteristics enable efficient transistor operation in linear or switching modes. Sourced from a trusted IC Manufacturer, this device supports engineers and sourcing specialists looking for durable, cost-effective transistor solutions.

2N5012-Transistor Key Features

• High collector-emitter voltage rating: Supports up to 160V, enabling use in circuits requiring elevated voltage handling capability.
• Collector current capacity: Handles continuous collector currents up to 600mA, suitable for moderate power applications.
• Medium power gain (hFE): Provides a reliable current gain range ensuring stable amplification performance across various operating conditions.
• TO-18 metal can package: Offers enhanced thermal dissipation and mechanical durability for industrial-grade reliability.

2N5012-Transistor Technical Specifications

2N5012-Transistor Advantages vs Typical Alternatives

Compared to typical small-signal transistors, this device offers significantly higher voltage and current ratings, making it more versatile for moderate power industrial applications. Its robust voltage withstand capability and reliable gain characteristics provide engineers with enhanced circuit stability and longevity. The TO-18 package ensures superior heat dissipation and mechanical strength, outperforming plastic-encapsulated alternatives in harsh environments.

Typical Applications

• Intermediate and output stage amplification in audio and signal processing equipment, where moderate power and high voltage tolerance are required.
• Switching applications in industrial control circuits demanding reliable medium power switching capability.
• Voltage regulation and protection circuits benefiting from its high breakdown voltage and gain stability.
• Driver transistor roles in relay and solenoid control for industrial automation systems.

2N5012-Transistor Brand Info

The 2N5012 transistor is distributed by established semiconductor manufacturers recognized for consistent quality and performance. The product is offered in a standard TO-18 metal can package, reflecting the brand??s commitment to durability and long-term reliability in industrial applications. This transistor is a proven component in various electronic designs, supported by detailed datasheets and application notes to facilitate integration by engineers and sourcing specialists.

FAQ

What is the maximum voltage rating for this transistor?

The transistor has a maximum collector-emitter voltage (V_CEO) rating of 160 volts, allowing it to operate safely in circuits with higher voltage requirements without breakdown.

Can this transistor handle continuous high current loads?

Yes, it supports a continuous collector current of up to 600mA, making it suitable for moderate power amplification and switching tasks in industrial and consumer electronics.

What package type does this transistor come in?

This device is supplied in a TO-18 metal can package, which offers improved thermal conductivity and mechanical robustness compared to plastic packages.

What is the typical current gain (hFE) range of this transistor?

The DC current gain ranges from 40 to 300, providing versatile gain characteristics suitable for a wide range of amplification applications.

Is this transistor suitable for high-frequency applications?

With a transition frequency (f_T) around 50 MHz, it is appropriate for moderate frequency amplification and switching, though it may not be ideal for ultra-high frequency RF applications.