2N5011-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

2N5011-Transistor Overview

The 2N5011 transistor is a high-voltage, NPN bipolar junction transistor designed for medium-power switching and amplification applications. With a collector-emitter voltage rating of up to 160V and a collector current capacity of 150mA, this device is well-suited for circuits requiring efficient voltage handling and moderate current throughput. Its complementary electrical characteristics make it ideal for use in industrial control systems, signal processing, and driver circuits. Engineers and sourcing specialists seeking reliable performance and robust voltage tolerance will find this transistor a practical choice. For detailed sourcing and technical support, visit IC Manufacturer.

2N5011-Transistor Key Features

• High voltage rating: Supports up to 160V collector-emitter voltage, enabling use in high-voltage switching applications.
• Moderate current handling: Collector current up to 150mA ensures suitability for medium-power amplification and switching tasks.
• Reliable gain characteristics: Current gain (hFE) typically ranges from 40 to 120, providing stable amplification across operating conditions.
• Low saturation voltage: Enhances switching efficiency and reduces power loss, improving overall circuit performance.

2N5011-Transistor Technical Specifications

2N5011-Transistor Advantages vs Typical Alternatives

This transistor offers a higher voltage rating than many comparable medium-power transistors, making it advantageous in circuits where voltage tolerance is critical. Its moderate current capability combined with a wide gain range provides design flexibility and reliable amplification. The device??s low saturation voltage enhances switching efficiency compared to alternatives, reducing power dissipation and improving thermal performance in demanding industrial environments.

Typical Applications

• Medium-power switching in industrial control systems where high-voltage tolerance and reliable transistor operation are essential for system stability.
• Signal amplification circuits requiring moderate gain and stable frequency response up to tens of megahertz.
• Driver stages for relays, solenoids, or other electromechanical components within voltage and current limits.
• General-purpose switching and amplification tasks in consumer and industrial electronic devices.

2N5011-Transistor Brand Info

The 2N5011 transistor is a standardized product widely available from multiple semiconductor manufacturers. Its specifications and performance characteristics are consistent across brands, ensuring interchangeability and reliable sourcing. This transistor is recognized for its robustness in industrial electronics and continues to be a preferred choice for engineers requiring a dependable NPN transistor with high-voltage capability and medium current handling.

FAQ

What is the maximum voltage the 2N5011 transistor can handle?

The maximum collector-emitter voltage rating is 160 volts, making it suitable for use in circuits that operate at relatively high voltages without risk of breakdown.

What is the typical current gain (hFE) range for this transistor?

The current gain typically ranges from 40 to 120, which allows for effective amplification in both switching and signal processing applications.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 75 MHz, it is capable of handling modest high-frequency operations, suitable for many industrial and control electronics tasks.

What is the maximum collector current for the device?

The transistor can safely conduct a collector current up to 150 mA, which fits medium-power applications such as relay driving and signal amplification.

Is the 2N5011 transistor suitable for high-temperature environments?

Yes, it operates reliably over a junction temperature range from -65??C to +200??C, making it appropriate for industrial applications with wide temperature variations.