2N5010S-Transistor by ON Semiconductor – NPN Power Transistor, TO-92 Package

2N5010S-Transistor Overview

The 2N5010S is a high-voltage NPN bipolar junction transistor (BJT) tailored for medium power switching and amplification applications. Offering robust performance in industrial and electronic circuits, this transistor handles collector-emitter voltages up to 160V with a continuous collector current rating of 4A. Its silicon planar epitaxial construction ensures stable operation and enhanced reliability under varying load conditions. Designed for use in power regulation, motor control, and voltage amplification, this device supports engineers with a dependable, cost-effective switching solution. For sourcing and detailed technical data, visit the IC Manufacturer.

2N5010S-Transistor Key Features

• High voltage capability: Supports up to 160V collector-emitter voltage, ideal for industrial switching circuits requiring wide voltage margins.
• Medium power handling: Continuous collector current of 4A enables reliable operation in moderate power amplification and switching applications.
• Planar epitaxial silicon construction: Enhances the transistor??s thermal stability and reduces leakage currents for improved efficiency and longevity.
• Complementary switching speed: Suitable for efficient switching with acceptable gain-bandwidth product, making it versatile across control and amplification roles.

2N5010S-Transistor Technical Specifications

2N5010S-Transistor Advantages vs Typical Alternatives

This transistor outperforms many standard switching BJTs by combining high voltage tolerance with moderate current capability, providing enhanced reliability in industrial environments. Its planar epitaxial design reduces leakage and improves thermal stability, resulting in longer operational life and consistent performance. Compared to alternatives, the device offers a balanced gain and switching speed suitable for diverse power control tasks, making it an efficient and robust choice for engineers seeking durable and cost-effective semiconductor solutions.

Typical Applications

• Power switching circuits in industrial motor controls where high voltage and moderate current handling are required for reliable operation.
• Voltage amplification stages in analog electronic devices demanding stable gain and thermal endurance.
• Relay drivers and solenoid actuators benefiting from the device??s capability to switch moderate loads efficiently.
• General-purpose amplification and switching in power management systems within industrial automation.

2N5010S-Transistor Brand Info

The 2N5010S transistor is offered by leading semiconductor manufacturers specializing in robust industrial-grade components. This product line emphasizes reliability in harsh operating conditions, supporting engineers in power electronics and control system designs. The transistor??s proven planar epitaxial technology reflects the brand??s commitment to quality and consistent device performance across demanding applications. Engineers sourcing this component can count on comprehensive datasheets and technical support from established supply chains affiliated with the manufacturer.

FAQ

What is the maximum collector-emitter voltage rating for this transistor?

The maximum collector-emitter voltage (V_CEO) is rated at 160 volts, allowing the transistor to handle high-voltage switching applications safely without breakdown under normal operating conditions.

Can this transistor be used in high-frequency amplification circuits?

While the transistor features a transition frequency around 15 MHz, it is primarily designed for medium frequency switching and amplification tasks. For very high-frequency applications, other specialized transistors might be more suitable.

What is the continuous collector current rating and why is it important?

The continuous collector current rating is 4 amperes, which defines the maximum current the device can handle continuously without damage. This is important for ensuring reliable operation in power switching and amplification circuits without overheating or performance degradation.

How does the planar epitaxial silicon construction benefit the transistor??s performance?

This construction method enhances thermal stability and reduces leakage currents, improving the overall efficiency and lifespan of the transistor, particularly under varying temperature and load conditions common in industrial environments.

Is this transistor suitable for use in motor control applications?

Yes, the 2N5010S??s voltage and current ratings, combined with its robust design, make it well-suited for motor control circuits where reliable switching of moderate power loads is required.