2N4930-Transistor by ON Semiconductor – NPN Power Transistor, TO-39 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • It features a voltage rating suitable for medium-power applications, ensuring stable operation under typical loads.
  • The compact package design allows easy integration on crowded circuit boards, saving valuable space.
  • Ideal for use in audio amplifiers, the 2N4930-Transistor helps improve sound clarity by providing consistent gain.
  • Manufactured to meet standard quality controls, it offers reliable performance over extended operating periods.
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2N4930-Transistor Overview

The 2N4930 is a high-performance NPN silicon transistor designed for general-purpose amplification and switching applications. Known for its reliable operation in medium power circuits, this transistor supports collector currents up to 1.5A and a maximum collector-emitter voltage of 60V. Its robust design ensures consistent gain characteristics across a broad temperature range, making it suitable for industrial and commercial electronics. With a complementary PNP device available, it facilitates push-pull amplifier configurations and other complementary circuit designs. For sourcing and detailed product specifications, visit IC Manufacturer.

2N4930-Transistor Key Features

  • High Collector Current Capacity: Supports up to 1.5A collector current, enabling effective handling of medium power loads in switching and amplification circuits.
  • Moderate Voltage Rating: With a collector-emitter voltage rating of 60V, it is well-suited for a variety of industrial applications requiring dependable voltage tolerance.
  • Complementary Pair Availability: Designed to complement a PNP equivalent transistor, simplifying design of push-pull and other symmetrical amplifier stages.
  • Stable Gain Characteristics: Offers consistent DC current gain (hFE) across typical operating conditions, ensuring predictable amplification performance.

2N4930-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 60 V
Collector-Base Voltage (VCBO) 80 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1.5 A
DC Current Gain (hFE) 40 to 160 (Typ.)
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 50 MHz
Package Type TO-225

2N4930-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage tolerance and high current handling, outperforming many general-purpose transistors in medium power applications. Its well-defined gain range and complementary device pairing simplify circuit design, while its reliable operation enhances long-term system stability. These attributes make it an advantageous choice for engineers prioritizing consistency and efficiency in discrete transistor implementations.

Typical Applications

  • Audio amplifier output stages benefit from the transistor??s complementary pairing and stable gain characteristics, enabling clear, distortion-free amplification at medium power levels.
  • Switching regulators and power control circuits utilize its 1.5A collector current capacity for efficient load switching.
  • General-purpose amplification in industrial control systems where durability and predictable performance are essential.
  • Push-pull amplifier configurations requiring matched NPN and PNP transistors for balanced signal handling and improved linearity.

2N4930-Transistor Brand Info

The 2N4930 transistor is a widely recognized discrete semiconductor device produced by multiple reputable manufacturers in the electronics industry. It is part of a family of silicon NPN transistors designed for medium power applications. The product’s consistent manufacturing standards ensure uniform electrical characteristics, providing engineers and sourcing specialists with a reliable component choice for industrial and commercial electronic designs.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this device is 1.5 amperes. This rating allows it to handle medium power loads effectively in both switching and amplification circuits without risk of damage under normal operating conditions.

Can the transistor be used in high-frequency applications?

This transistor has a transition frequency (fT) of approximately 50 MHz, making it suitable for moderate frequency applications. While not designed for very high-frequency RF circuits, it performs well in audio and industrial control frequencies.

What type of package does the transistor come in?

The device is typically supplied in a TO-225 package, which offers robust mechanical protection and efficient heat dissipation, supporting reliable operation in medium power electronic assemblies.

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Is there a complementary transistor available for this device?

Yes, the 2N4930 is designed to be complemented by a PNP transistor counterpart. This allows engineers to implement push-pull amplifier designs and other symmetrical circuits requiring matched NPN and PNP devices.

What voltage ratings should be observed when using this transistor?

The maximum collector-emitter voltage (VCEO) is 60 volts, collector-base voltage (VCBO) is 80 volts, and emitter-base voltage (VEBO) is 5 volts. It is important to operate within these limits to prevent breakdown and ensure reliable transistor performance.

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