2N4860-JFET-Nchannel N-Channel JFET Transistor, TO-92 Package by Motorola

  • This JFET device controls current flow with high input impedance, improving signal integrity in circuits.
  • Low noise performance ensures clear amplification, vital for sensitive analog signal processing tasks.
  • Its compact package design allows for efficient board space usage in densely populated assemblies.
  • Ideal for audio preamplifiers, the 2N4860-JFET-Nchannel enhances sound quality through minimal distortion.
  • Manufactured to meet standard reliability criteria, it supports consistent operation under typical conditions.
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2N4860-JFET-Nchannel Overview

The 2N4860 JFET N-channel transistor is a high-performance junction field-effect transistor designed for low-noise, high-frequency amplification and switching applications. With a maximum drain-source voltage rating suitable for a range of industrial electronics, it provides reliable operation in analog signal processing and RF circuits. This device offers stable electrical characteristics with low input capacitance and low gate leakage current, ensuring efficient power handling and precise control. Engineers and sourcing specialists will find it well-suited for sensitive amplification stages and switching circuits requiring robust, reproducible performance. For detailed product sourcing and support, visit IC Manufacturer.

2N4860-JFET-Nchannel Technical Specifications

ParameterSpecificationUnit
Drain-Source Voltage (VDS)??30V
Gate-Source Voltage (VGS)??25V
Drain Current (ID)20mA
Power Dissipation (PD)310mW
Gate Cutoff Voltage (VGS(off))-0.7 to -6.0V
Input Capacitance (Ciss)5pF
Transconductance (gm)1.0 to 5.5mS
Operating Temperature Range-55 to +150??C

2N4860-JFET-Nchannel Key Features

  • Low Noise Performance: Delivers superior low noise characteristics, essential for high-fidelity amplification in sensitive analog circuits.
  • High Input Impedance: Ensures minimal loading on preceding stages, preserving signal integrity in measurement and sensor applications.
  • Wide Voltage Range: Capable of handling ??30 V drain-source voltage, enabling versatility in various industrial and communication circuit designs.
  • Stable Thermal Operation: Maintains performance across a broad temperature range, supporting reliable usage in harsh environments.

Typical Applications

  • Low-noise preamplifiers for audio and RF signals, where signal clarity and minimal interference are critical.
  • High-frequency oscillators in communication equipment, benefiting from the device’s stable electrical characteristics.
  • Analog switching circuits requiring fast response and low distortion for precise control.
  • Voltage-controlled amplifiers (VCAs) and attenuators in industrial measurement systems for accurate signal modulation.

2N4860-JFET-Nchannel Advantages vs Typical Alternatives

This transistor offers enhanced sensitivity and low input capacitance compared to typical alternatives, resulting in improved signal accuracy and reduced distortion. Its robust voltage handling and low power dissipation make it a reliable choice for demanding industrial applications. The device’s stable operation across temperature extremes ensures consistent performance, providing engineers with a dependable component that integrates seamlessly into precision analog and RF circuits.

2N4860-JFET-Nchannel Brand Info

The 2N4860 is a well-established N-channel JFET originally popularized by semiconductor manufacturers such as Central Semiconductor and other legacy suppliers. It is recognized for its consistent electrical parameters and durability in industrial electronics. This device continues to be a preferred choice for engineers designing low-noise, high-frequency circuits due to its proven track record and availability from multiple trusted sources in the semiconductor market.

FAQ

What is the maximum drain-source voltage rating for this JFET?

The maximum drain-source voltage rating is ??30 volts, allowing the transistor to operate safely within standard voltage ranges used in analog and RF circuit designs without risk of breakdown.

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