2N4449UA-Transistor by ON Semiconductor – High-Speed Switching Transistor, TO-92 Package

  • This transistor amplifies electrical signals, enabling efficient switching and signal processing in circuits.
  • It supports moderate voltage and current levels, ensuring stable operation under typical electronic loads.
  • The compact package design allows for board-space savings, facilitating integration into dense circuit layouts.
  • Ideal for use in low-power amplification stages, improving signal clarity in communication devices.
  • Manufactured to meet standard quality requirements, providing consistent performance and durability.
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产品上方询盘

2N4449UA-Transistor Overview

The 2N4449UA is a high-performance NPN bipolar junction transistor designed for switching and amplification applications. Featuring a maximum collector current rating suitable for medium power tasks, it supports a collector-emitter voltage that ensures robust operation in industrial and control circuits. Its design optimizes gain characteristics and switching speeds, making it ideal for use in signal processing, driver stages, and interface circuits. The device is manufactured following stringent quality controls, ensuring reliable performance under varied environmental conditions. For detailed sourcing and technical support, visit IC Manufacturer.

2N4449UA-Transistor Key Features

  • High Collector Current Capacity: Supports up to 600 mA, enabling efficient handling of medium power loads in control circuits.
  • Collector-Emitter Voltage Rating: Withstands up to 100 V, ensuring durability and safe operation in high-voltage applications.
  • Low Saturation Voltage: Enhances switching efficiency, reducing power losses and improving overall circuit performance.
  • Gain Bandwidth Product: Offers a balanced current gain for linear amplification and switching tasks, improving signal integrity.
  • Robust Package Design: Encapsulated in a TO-92 package facilitating easy integration into compact PCB layouts and prototyping environments.

2N4449UA-Transistor Technical Specifications

Parameter Specification
Collector-Emitter Voltage (VCEO) 100 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300 (depending on collector current)
Transition Frequency (fT) 100 MHz (typical)
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Package Type TO-92

2N4449UA-Transistor Advantages vs Typical Alternatives

This transistor delivers a strong balance of collector voltage and current ratings, making it advantageous over typical small-signal transistors with lower power capabilities. Its low saturation voltage and robust gain parameters enable higher efficiency in switching and amplification roles. The TO-92 package simplifies integration into compact designs, while the transistor??s reliable electrical characteristics ensure consistent performance in industrial and control systems compared to generic alternatives.

Typical Applications

  • Signal amplification in low to medium power audio and communication circuits, where linearity and gain stability are critical.
  • Switching elements in relay drivers, enabling effective control of higher power loads with minimal power loss.
  • Interface stages in industrial automation equipment, providing reliable signal conditioning between sensors and control units.
  • General-purpose amplification and switching in test and measurement devices requiring stable transistor performance.

2N4449UA-Transistor Brand Info

The 2N4449UA transistor is produced under strict manufacturing standards by leading semiconductor suppliers, ensuring consistent quality and reliability. This device is part of a family of transistors widely recognized for their dependable performance in industrial and commercial electronics. The product??s proven track record in various control, amplification, and switching applications reflects its design optimization and quality assurance practices.

FAQ

What is the maximum collector current rating of the 2N4449UA transistor?

The transistor supports a maximum collector current of 600 mA, suitable for medium power switching and amplification tasks in industrial and control circuits.

What voltage levels can the 2N4449UA handle safely?

It can withstand collector-emitter and collector-base voltages up to 100 V, allowing it to operate reliably in high-voltage environments without risk of breakdown.

How does the gain vary for this transistor?

The DC current gain (hFE) ranges from 40 to 300 depending on collector current, providing flexibility for both low noise amplification and switching efficiency.

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产品中间询盘

What package type is used for this transistor, and why is it beneficial?

The device is housed in a TO-92 package, which is compact and easy to mount, making it ideal for prototyping and integration in space-constrained PCB designs.

What are common applications where this transistor is preferred?

This transistor is commonly used in signal amplification, relay driving, interface circuits in automation, and general-purpose switching, offering reliable performance across these use cases.

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