2N4449U/TR ON Semiconductor NPN Transistor – High Voltage, TO-92 Package

  • This transistor amplifies signals efficiently, enabling improved performance in various electronic circuits.
  • It features a high-frequency response, essential for maintaining signal integrity in fast-switching applications.
  • The package design offers a compact footprint, saving valuable board space in dense electronic assemblies.
  • Ideal for use in RF communication devices, it supports stable operation under fluctuating signal conditions.
  • Manufactured to meet stringent quality standards, ensuring consistent performance and long-term reliability.
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2N4449U/TR Overview

The 2N4449U/TR is a high-performance NPN bipolar junction transistor designed for switching and amplification applications in industrial electronics. Featuring a TO-92 package, this transistor offers a maximum collector current of 600mA and a collector-emitter voltage rating of 80V, making it suitable for moderate power handling in compact circuits. Its low saturation voltage and fast switching speed enable efficient signal processing and power management. With dependable thermal characteristics and robust electrical parameters, the device is ideal for use in control systems, signal amplification, and general-purpose switching. Available from IC Manufacturer, it meets the demands of engineers and sourcing specialists seeking reliable, cost-effective transistor solutions.

2N4449U/TR Key Features

  • High Collector Current: Supports up to 600mA, enabling robust switching and amplification for moderate power circuits.
  • Wide Voltage Range: Collector-emitter voltage rating of 80V allows use in various industrial control and signal applications.
  • Low Saturation Voltage: Minimizes power loss and heat dissipation, improving overall circuit efficiency.
  • Fast Switching Speed: Suitable for high-frequency switching tasks, enhancing performance in timing and pulse circuits.
  • Compact TO-92 Package: Enables easy integration in densely packed circuit boards while ensuring thermal stability.
  • Reliable Thermal Performance: Supports stable operation under typical industrial temperature ranges, ensuring consistent device longevity.
  • General-Purpose NPN Transistor: Versatile for amplification, switching, and signal processing across a broad range of applications.

2N4449U/TR Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Maximum Collector-Emitter Voltage (VCEO) 80 V
Maximum Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300 (varies with operating conditions)
Transition Frequency (fT) Up to 100 MHz (typical)
Package Type TO-92
Operating Junction Temperature (TJ) -55??C to +150??C

2N4449U/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance and collector current capacity, making it advantageous over typical low-power alternatives. Its low saturation voltage reduces power losses, enhancing energy efficiency in switching circuits. The compact TO-92 package supports easy PCB integration without sacrificing thermal performance, providing reliable and consistent operation in industrial environments. These attributes make it a preferred choice for engineers requiring dependable NPN transistors in moderate power applications.

Typical Applications

  • General-purpose switching in industrial control systems, where reliable operation at voltages up to 80V is required for driving loads such as relays and solenoids.
  • Signal amplification in audio and low-frequency circuits, benefiting from its stable gain and low noise characteristics.
  • Pulse generation and timing circuits leveraging its fast switching speed for improved performance in digital logic and waveform shaping.
  • Power management in embedded systems, providing efficient switching with minimal heat dissipation in compact layouts.

2N4449U/TR Brand Info

The 2N4449U/TR is a product offered by IC Manufacturer, a recognized supplier of semiconductor components for industrial and commercial electronics. This transistor is part of their extensive portfolio of discrete devices designed to meet stringent quality and reliability standards. Manufactured using advanced fabrication processes, the device ensures consistent performance and long operational life. The brand supports engineers and sourcing specialists with comprehensive datasheets, technical support, and traceability to facilitate seamless integration into demanding applications.

FAQ

What is the maximum collector current rating for the 2N4449U/TR?

The maximum collector current for this transistor is 600mA, allowing it to handle moderate load currents in switching and amplification applications safely within its operational limits.

Can this transistor operate at high frequencies?

Yes, the device typically supports transition frequencies up to 100 MHz, making it suitable for high-frequency switching and signal processing tasks in various electronic circuits.

What package type does the 2N4449U/TR come in?

This transistor is housed in a TO-92 package, which is compact and allows for easy mounting on printed circuit boards while providing adequate thermal dissipation for its power rating.

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Is the 2N4449U/TR suitable for use in industrial temperature environments?

Yes, it is rated for junction temperatures ranging from -55??C to +150??C, making it capable of reliable operation under typical industrial environmental conditions.

How does the 2N4449U/TR compare to other general-purpose NPN transistors?

Compared to similar devices, it offers a higher voltage rating and sufficient current handling with low saturation voltage, which improves efficiency and reliability in switching applications, distinguishing it as a versatile choice for moderate power electronic designs.

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