2N4449-Transistor by ON Semiconductor – High-Speed Switching, TO-92 Package

  • This transistor amplifies electrical signals, enabling improved performance in low-noise circuits.
  • Its high-frequency capability ensures efficient operation in RF and communication devices.
  • The compact package offers board-space savings, ideal for dense electronic assemblies.
  • Commonly used in switching applications, it provides fast response and stable control.
  • Manufactured to meet strict quality standards, ensuring consistent reliability over time.
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产品上方询盘

2N4449-Transistor Overview

The 2N4449 transistor is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a medium power rating with reliable gain characteristics, making it suitable for analog signal amplification and digital switching circuits. With a maximum collector current of 600 mA and a collector-emitter voltage rating of 80 V, this transistor offers robust electrical endurance for industrial and commercial electronics. Its complementary parameters ensure stable operation under varying load conditions, appealing to engineers and sourcing specialists seeking dependable, cost-effective components. For detailed sourcing and technical support, visit IC Manufacturer.

2N4449-Transistor Key Features

  • High collector current capability: Supports up to 600 mA, enabling efficient power handling in medium-load circuits.
  • Wide voltage tolerance: Collector-emitter voltage rated at 80 V, ensuring reliable operation in higher voltage environments.
  • Stable current gain (hFE): Provides consistent amplification across a broad range of collector currents, critical for precise analog signal processing.
  • Fast switching speed: Suitable for switching applications, reducing delay and improving response times in digital circuits.

2N4449-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 80 V
Collector Current (IC) 600 mA
Power Dissipation (Ptot) 625 mW
Transition Frequency (fT) 150 MHz
Gain Bandwidth Product 150 MHz
DC Current Gain (hFE) 40?C300 ?C
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Base-Emitter Voltage (VBE) 1.2 V (typical)

2N4449-Transistor Advantages vs Typical Alternatives

This transistor offers a superior balance of voltage rating and current handling compared to many standard NPN transistors in its class. Its higher collector-emitter voltage and current capacity enable enhanced reliability and flexibility in diverse circuit designs. Additionally, the wide gain range and fast switching capabilities provide engineers with improved accuracy and efficiency in both analog and digital applications, outperforming many typical alternatives with lower power and frequency handling.

Typical Applications

  • Signal amplification in audio and RF circuits where medium power and high gain stability are required, ensuring clear and consistent signal integrity.
  • Switching applications in industrial control systems, enabling reliable on/off control of loads up to 600 mA.
  • Driver stages for relays and solenoids, providing sufficient current gain and voltage tolerance for coil activation.
  • General-purpose transistor use in consumer and industrial electronic devices where versatility and robustness are critical.

2N4449-Transistor Brand Info

The 2N4449 is a widely recognized transistor manufactured by several semiconductor suppliers, known for its robust performance and reliability in industrial and commercial electronic applications. It is produced using established bipolar junction transistor technology, ensuring consistent quality and compliance with industry standards. This product??s reputation is supported by dependable datasheets and availability through multiple distributors, making it a preferred choice among engineers for medium-power amplification and switching needs.

FAQ

What is the maximum collector current rating for the 2N4449 transistor?

The maximum collector current (IC) for this transistor is 600 mA. This rating makes it suitable for medium-power applications where moderate current levels are required without compromising device reliability.

Can the 2N4449 transistor be used for high-frequency applications?

Yes, the transistor has a transition frequency (fT) of approximately 150 MHz, which allows it to perform effectively in many RF and high-frequency analog circuits, providing good amplification and switching speed.

What is the typical gain (hFE) range for this transistor?

The DC current gain typically ranges from 40 to 300 depending on the collector current and operating conditions. This wide gain range offers flexibility in amplification applications.

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产品中间询盘

What voltage levels can the 2N4449 transistor safely handle?

It has a maximum collector-emitter voltage (VCEO) of 80 V and a collector-base voltage (VCBO) of 100 V, allowing it to operate reliably in circuits with moderate to high voltage requirements.

Is the 2N4449 suitable for switching applications?

Absolutely. Its fast switching speed combined with adequate current and voltage ratings makes it well-suited for switching tasks in industrial and consumer electronic designs, including relay driving and digital logic switching.

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