2N4399-Transistor Overview
The 2N4399 is a high-performance N-channel junction field-effect transistor (JFET) engineered for analog switching and low-noise amplification applications. It features a low gate leakage current and a high forward transfer admittance, making it ideal for sensitive signal processing tasks. This transistor supports a maximum drain-source voltage of 25 V and a drain current of up to 10 mA, allowing for versatile use in low-power circuits. The device’s robust construction ensures reliable operation across a broad temperature range. For more detailed specifications, visit the IC Manufacturer website.
2N4399-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (V_DS) | 25 | V |
| Gate-Source Voltage (V_GS) | -30 | V |
| Drain Current (I_D) | 10 | mA |
| Power Dissipation (P_D) | 310 | mW |
| Forward Transfer Admittance (|Y_fs|) | 1000 | ??S |
| Gate Leakage Current (I_GSS) | 1 | pA |
| Noise Figure | 2 | dB |
| Operating Temperature Range | -55 to +150 | ??C |
2N4399-Transistor Key Features
- Low gate leakage current: Minimizes signal distortion and improves sensitivity in precision analog circuits.
- High forward transfer admittance: Enables efficient current amplification, critical for low-noise amplification stages.
- Wide operating temperature range: Ensures stable performance in harsh industrial environments.
- Compact power dissipation: Supports energy-efficient designs without thermal management complexities.
Typical Applications
- Low-noise preamplifiers in audio and sensor signal conditioning circuits, benefiting from the transistor??s low gate leakage and noise figure.
- Analog switching circuits requiring precise control and low distortion.
- Voltage-controlled resistors in analog synthesizers or modulation circuits.
- Small-signal amplifiers in instrumentation and communication equipment.
2N4399-Transistor Advantages vs Typical Alternatives
This JFET offers superior sensitivity and low noise characteristics compared to standard bipolar junction transistors (BJTs), making it ideal for precision analog applications. Its low gate leakage current enhances accuracy in signal processing, while the high forward transfer admittance supports efficient amplification. Additionally, the device??s broad operating temperature range and moderate power dissipation provide reliable performance in demanding industrial environments where alternatives may falter.
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2N4399-Transistor Brand Info
The 2N4399 transistor is a widely recognized part number historically produced by multiple semiconductor manufacturers including ON Semiconductor and Vishay. It is commonly available as a discrete component in a TO-92 package, favored for its proven reliability and consistent electrical characteristics. The device??s enduring presence in the market underscores its role as a standard N-channel JFET solution for low-noise and analog switching applications across industrial and instrumentation sectors.
FAQ
What type of transistor is the 2N4399?
The 2N4399 is an N-channel junction field-effect transistor (JFET), specifically designed for low-noise amplification and analog switching. It operates by controlling current flow via an electric field, providing high input impedance and low leakage current.
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What are the maximum voltage and current ratings for this transistor?
The maximum drain-source voltage is 25 V, and the maximum drain current is 10 mA. Additionally, the gate-source voltage rating is -30 V, which defines the maximum allowable reverse voltage on the gate.
How does the low gate leakage current benefit circuit performance?
Low gate leakage current reduces unwanted signal distortion and noise, improving the accuracy and sensitivity of analog circuits. This makes the device highly suitable for precision amplification and measurement applications.
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Can the 2N4399 operate in harsh temperature environments?
Yes, it supports an operating temperature range from -55??C to +150??C, ensuring reliable






