2N4234L-Transistor NPN Amplifier Transistor – ON Semiconductor, TO-39 Package

  • This transistor amplifies electrical signals, enabling effective switching and signal control in circuits.
  • Featuring a robust voltage rating, it supports stable operation under varying electrical loads.
  • The compact package design minimizes board space, simplifying integration into dense electronic assemblies.
  • Ideal for audio amplification tasks, it enhances sound clarity and power efficiency in consumer devices.
  • Manufactured to meet standard quality checks, it ensures consistent performance over extended use.
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产品上方询盘

2N4234L-Transistor Overview

The 2N4234L is a high-performance NPN silicon planar transistor designed for medium power switching and amplification in industrial electronics. It features a high voltage rating and robust current handling, making it suitable for reliable operation in demanding environments. With a maximum collector-emitter voltage of 80 V and a collector current rating of 3 A, this transistor supports efficient switching and linear amplification applications. Its planar construction ensures consistent electrical characteristics and thermal stability. Engineers and sourcing specialists can depend on this device for enhancing circuit durability and performance in diverse industrial applications. For trusted sourcing and detailed specifications, visit IC Manufacturer.

2N4234L-Transistor Key Features

  • High Collector-Emitter Voltage (80 V): Enables operation in circuits requiring elevated voltage tolerance, ensuring safety and robustness.
  • Collector Current Capacity of 3 A: Supports medium power loads, ideal for switching and amplification tasks in industrial environments.
  • Planar Silicon Construction: Provides enhanced thermal stability and consistent electrical performance, improving circuit reliability.
  • DC Current Gain (hFE) Range of 40 to 160: Offers flexibility in gain selection, optimizing amplification efficiency in various circuit designs.

2N4234L-Transistor Technical Specifications

Parameter Symbol Value Unit
Collector-Emitter Voltage VCEO 80 V
Collector-Base Voltage VCBO 100 V
Emitter-Base Voltage VEBO 5 V
Collector Current (Continuous) IC 3 A
DC Current Gain (hFE) hFE 40 to 160 ?C
Power Dissipation Ptot 30 W
Transition Frequency fT 10 MHz
Operating Junction Temperature Tj 200 ??C

2N4234L-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage and current capacity with reliable thermal stability, which distinguishes it from many generic medium-power transistors. Its wide DC current gain range enhances design flexibility, while the robust planar silicon construction contributes to superior longevity and consistent performance under industrial stresses. Compared to common alternatives, it delivers improved stability and power handling for efficient switching and amplification in demanding applications.

Typical Applications

  • Industrial switching circuits requiring high voltage and moderate current handling, benefiting from the device’s 80 V and 3 A ratings for safe and efficient operation.
  • Linear amplification stages in audio and signal processing equipment, utilizing the variable current gain for tailored amplification performance.
  • Power regulation and control circuits in industrial automation, leveraging its thermal stability to maintain performance over extended operating periods.
  • General-purpose medium power transistor applications in electronic devices where durability and consistent electrical characteristics are essential.

2N4234L-Transistor Brand Info

This transistor is produced under stringent manufacturing standards ensuring high reliability and consistent quality. It is a trusted component widely adopted in industrial electronics for switching and amplification. Manufacturers provide comprehensive datasheets and detailed performance data to support engineers and sourcing specialists in selecting the 2N4234L for demanding applications, reinforcing its position as a dependable medium power transistor in the market.

FAQ

What is the maximum collector current rating of the 2N4234L transistor?

The maximum continuous collector current for this transistor is 3 amperes. This rating ensures it can handle moderate power loads in switching and amplification applications without degradation when operated within specified limits.

Can the 2N4234L be used in high-frequency circuits?

The device has a transition frequency (fT) of approximately 10 MHz, making it suitable for moderate-frequency applications. While not intended for ultra-high frequency designs, it performs well in typical industrial switching and amplification tasks.

What is the significance of the transistor’s DC current gain range?

The DC current gain (hFE) range from 40 to 160 provides design flexibility, allowing engineers to select or bias the device for various amplification levels. This range supports both low and moderate gain requirements in different circuit configurations.

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How does the 2N4234L handle thermal stress in industrial environments?

Thanks to its planar silicon construction and a maximum junction temperature rating of 200??C, this transistor offers good thermal stability. This characteristic helps maintain reliable operation under extended use and elevated temperature conditions common in industrial applications.

What voltage ratings should be considered when integrating this transistor into a circuit?

The key voltage parameters include a collector-emitter voltage of 80 V, collector-base voltage of 100 V, and emitter-base voltage of 5 V. Ensuring operating voltages remain within these limits is critical to prevent device breakdown and ensure long-term reliability.

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