2N4091E3-Transistor NPN Bipolar Junction Transistor TO-92 Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling improved control in various electronic circuits.
  • Featuring a specified voltage rating, it ensures safe operation under defined electrical conditions.
  • The compact package design allows efficient use of board space in tight electronic assemblies.
  • Ideal for switching applications, it enhances performance in devices requiring reliable signal modulation.
  • Manufactured to meet quality standards, it provides consistent performance and long-term reliability.
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2N4091E3-Transistor Overview

The 2N4091E3 is a high-performance silicon NPN transistor designed for robust switching and amplification applications. It provides reliable operation in low to medium power circuits with a collector current rating suitable for various industrial uses. With a focus on stability and efficiency, this transistor ensures consistent gain characteristics and thermal robustness. Its TO-18 metal can package allows for enhanced heat dissipation, making it ideal for demanding environments. Engineers and sourcing specialists will appreciate its compatibility with standard circuit designs and proven semiconductor quality, available through IC Manufacturer.

2N4091E3-Transistor Technical Specifications

Parameter Value
Transistor Type NPN Silicon
Collector-Emitter Voltage (VCEO) 40 V
Collector Current (IC) 200 mA
Power Dissipation (Ptot) 400 mW
Gain Bandwidth Product (fT) 150 MHz
DC Current Gain (hFE) 40 to 160
Package Type TO-18 Metal Can
Operating Junction Temperature -65??C to +200??C
Transition Frequency Up to 150 MHz
Emitter-Base Voltage (VEBO) 6 V

2N4091E3-Transistor Key Features

  • High Current Gain: Enables efficient signal amplification, reducing the need for additional gain stages in circuit design.
  • Wide Frequency Response: With a transition frequency up to 150 MHz, it supports high-speed switching and RF applications.
  • Robust Thermal Performance: The TO-18 metal can package enhances heat dissipation, ensuring reliable operation over a wide temperature range.
  • Low Power Dissipation: Supports energy-efficient operation, which is critical in power-sensitive industrial equipment.

Typical Applications

  • Signal amplification in analog circuits such as audio preamplifiers and intermediate frequency stages in communication devices.
  • Switching applications in industrial control systems where reliable transistor switching is required.
  • Low noise amplification stages in sensor interface circuits, improving measurement accuracy.
  • Driver stages for relay or LED circuits, benefiting from the transistor??s moderate power and gain characteristics.

2N4091E3-Transistor Advantages vs Typical Alternatives

The 2N4091E3 offers a balanced combination of gain, frequency response, and power handling that is well-suited to diverse industrial applications. Compared to typical alternatives, it provides improved thermal stability due to its metal can package and maintains consistent current gain across a wide temperature range. This makes it a reliable choice for precision amplification and switching tasks where accuracy and durability are critical.

2N4091E3-Transistor Brand Info

This transistor is part of the 2N4000 series, historically produced by prominent semiconductor manufacturers such as ON Semiconductor and Texas Instruments. The 2N4091E3 is recognized for its industrial-grade quality and long-standing use in analog and switching applications. Its construction and performance are aligned with stringent industry standards, making it a trusted component for engineers designing dependable electronic systems.

FAQ

What are the maximum voltage ratings for this transistor?

The device supports a maximum collector-emitter voltage (VCEO) of 40 volts and an emitter-base voltage (VEBO) of 6 volts, which makes it suitable for moderate voltage applications without risk of breakdown.

How does the transistor??s package affect its performance?

The TO-18 metal can package offers superior thermal conductivity compared to plastic packages, improving heat dissipation and enhancing reliability in high-temperature or continuous operation environments.

Can this transistor be used in RF applications?

Yes, with a transition frequency up to 150 MHz, it is capable of handling moderately high-frequency signals, making it suitable for certain RF amplification and switching tasks in communication circuits.

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