2N4033UA-Transistor by ON Semiconductor – NPN Power Transistor, TO-66 Package

  • This transistor amplifies electrical signals, enabling efficient control of current in various circuits.
  • Its voltage rating supports stable operation under high-stress conditions, ensuring consistent performance.
  • The compact package design reduces board space, allowing for more streamlined and efficient layouts.
  • Ideal for switching applications, it helps manage power delivery with precision and reliability.
  • Manufactured to meet stringent quality standards, it offers dependable operation over extended use.
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产品上方询盘

2N4033UA-Transistor Overview

The 2N4033UA is a high-power NPN bipolar junction transistor designed for robust switching and amplification in industrial applications. Engineered for reliable performance, it supports collector currents up to 10A and collector-emitter voltages reaching 60V, making it suitable for demanding power regulation and control circuits. The transistor’s sturdy construction ensures enhanced thermal stability and operational longevity under high load conditions. Its complementary characteristics provide precise current gain and efficient switching, positioning it as a dependable component for engineers and sourcing specialists seeking durable semiconductor solutions. For more detailed information, visit the IC Manufacturer website.

2N4033UA-Transistor Key Features

  • High Collector Current Capability: Supports continuous collector currents up to 10A, enabling efficient handling of heavy loads in power control systems.
  • Robust Voltage Ratings: With a maximum collector-emitter voltage of 60V, it ensures reliable operation in moderately high-voltage environments.
  • Stable Current Gain (hFE): Offers a current gain range between 40 to 160, providing predictable amplification critical for precision circuit design.
  • Enhanced Thermal Performance: Designed with a maximum junction temperature of 200??C, allowing for improved heat dissipation and operational stability under harsh conditions.

2N4033UA-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vce) 60 V (max)
Collector Current (Ic) 10 A (max)
Power Dissipation (Ptot) 115 W (max)
Current Gain (hFE) 40 to 160
Transition Frequency (ft) ??3 MHz
Junction Temperature (Tj) 200??C (max)
Collector-Base Voltage (Vcb) 80 V (max)
Emitter-Base Voltage (Veb) 7 V (max)
Package Type TO-3 Metal Can

2N4033UA-Transistor Advantages vs Typical Alternatives

This transistor stands out with its high collector current and voltage ratings coupled with a robust power dissipation capacity, outperforming typical low-power alternatives. Its wide current gain range ensures stable amplification, while the TO-3 package enhances thermal conduction, boosting reliability in harsh industrial environments. These advantages make it a preferred choice for engineers requiring durable and efficient power transistors with consistent performance.

Typical Applications

  • Power Amplification in Industrial Control Systems: Utilized for driving high-current loads and managing power in automated machinery and motor control circuits.
  • Switching Regulators: Suitable for use in DC-DC converters where efficient switching and high current handling are critical.
  • Audio Amplifiers: Employed in high-power stages requiring linear amplification with low distortion.
  • Voltage Regulation: Used in voltage regulation modules for maintaining stable output under varying load conditions.

2N4033UA-Transistor Brand Info

The 2N4033UA is part of a series of high-power transistors manufactured under stringent quality standards to meet industrial reliability requirements. The product is recognized for its robust design and consistent performance, making it a trusted component among engineers and sourcing specialists. Its TO-3 package ensures durability and effective heat dissipation, aligning with industry expectations for power semiconductor devices used in demanding applications.

FAQ

What is the maximum collector current rating for this transistor?

The device supports a maximum continuous collector current of 10 amperes, enabling it to handle significant load currents in power electronics applications without compromising reliability.

Can this transistor be used in high-temperature environments?

Yes, with a maximum junction temperature rating of 200??C, it is suitable for environments where elevated temperatures are common, provided proper heat sinking is applied to maintain thermal limits.

What package type does this transistor come in?

This transistor is housed in a TO-3 metal can package, which offers excellent mechanical strength and thermal conductivity, facilitating effective heat dissipation during high-power operation.

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产品中间询盘

What is the voltage rating between collector and emitter?

The maximum collector-emitter voltage is rated at 60 volts, ensuring safe operation in circuits with moderate voltage levels up to this threshold.

How does the current gain affect circuit design?

The current gain (hFE) ranges from 40 to 160, providing flexibility in amplification stages. This range allows designers to predict transistor behavior accurately when selecting it for switching or linear amplifier roles.

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