2N3999-Transistor Overview
The 2N3999 transistor is a high-performance silicon NPN bipolar junction transistor designed for medium power and low-frequency switching applications. It offers robust current handling capabilities and reliable operation under various environmental conditions. This transistor is widely utilized in industrial electronics, signal amplification, and switching circuits where durability and efficiency are critical. Its sturdy construction and electrical characteristics make it a dependable choice for engineers seeking consistent performance in both analog and digital designs. For detailed sourcing and technical support, visit IC Manufacturer.
2N3999-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Type | NPN Bipolar Junction Transistor | – |
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 3 | A |
| Power Dissipation (PD) | 30 | W |
| DC Current Gain (hFE) | 40 to 160 | – |
| Transition Frequency (fT) | 10 | MHz |
| Package Type | TO-3 Metal Can | – |
2N3999-Transistor Key Features
- High Collector Current Handling: Supports up to 3A continuous collector current, ensuring robust performance in medium power applications.
- Wide Voltage Ratings: Collector-emitter voltage rating up to 60V enables use in various switching and amplification circuits with moderate voltage demands.
- High Power Dissipation Capability: With a maximum power dissipation of 30W, it supports demanding continuous operation while maintaining thermal stability.
- Reliable Gain Range: DC current gain ranging from 40 to 160 allows for flexible design choices in amplification stages.
- Durable TO-3 Package: The metal can package enhances thermal conductivity and mechanical durability, improving device lifespan under industrial conditions.
- Frequency Performance: Transition frequency of 10 MHz supports low to moderate frequency applications, suitable for audio and switching circuits.
Typical Applications
- Power amplification in audio frequency circuits where medium power and linearity are required, ensuring clean signal reproduction.
- Switching and driver circuits in industrial control systems, benefiting from its robust current and voltage capabilities.
- Signal amplification stages in instrumentation equipment, leveraging its reliable gain and low noise characteristics.
- General-purpose medium power transistor applications in automotive and consumer electronics, providing cost-effective and dependable solutions.
2N3999-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of power handling, voltage tolerance, and gain, making it advantageous over typical low-power or surface-mount alternatives. Its robust TO-3 metal can package ensures superior thermal management and mechanical reliability, essential for demanding industrial environments. The wide voltage and current ratings provide enhanced flexibility for engineers designing medium power amplifiers and switching circuits, delivering consistent performance without compromising efficiency or durability.
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2N3999-Transistor Brand Info
The 2N3999 transistor is an industry-standard device originally introduced by several semiconductor manufacturers as part of their discrete transistor portfolio. It is well-recognized for its metal can TO-3 package and robust specifications suitable for medium power applications. Multiple legacy and current manufacturers produce this transistor to meet broad industrial and commercial requirements. It remains a trusted component in power amplification and switching circuits due to its proven reliability and availability
