2N3904UB/TR Overview
The 2N3904UB/TR is a widely used NPN bipolar junction transistor (BJT) designed for low-power amplification and switching applications. Featuring a robust gain bandwidth and reliable electrical characteristics, it supports efficient signal processing in various industrial and consumer electronics circuits. This transistor is well-suited for general-purpose amplification, offering stable performance under diverse operating conditions. Its compatibility with standard circuit designs makes it a preferred choice among engineers and sourcing specialists looking for a dependable transistor solution. For detailed product sourcing and additional technical data, visit IC Manufacturer.
2N3904UB/TR Key Features
- Low collector-emitter saturation voltage: Enables efficient switching with minimal power loss, improving overall circuit performance.
- High current gain (hFE): Provides reliable amplification, reducing the need for additional gain stages in signal processing.
- Wide operating voltage range: Facilitates versatile use across various low-voltage applications without compromising stability.
- Complementary transistor pairing: Compatible with PNP counterparts for push-pull amplifier designs, enhancing circuit integration.
2N3904UB/TR Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 40 | V | Maximum voltage rating |
| Collector-Base Voltage (VCBO) | 60 | V | Maximum voltage rating |
| Emitter-Base Voltage (VEBO) | 6 | V | Maximum voltage rating |
| Collector Current (IC) | 200 | mA | Continuous collector current |
| Power Dissipation (Ptot) | 625 | mW | Maximum total power |
| Transition Frequency (fT) | 300 | MHz | Frequency at which current gain falls to unity |
| DC Current Gain (hFE) | 100?C300 | Unitless | Typical gain range at IC=10mA |
| Junction Temperature (Tj) | 150 | ??C | Maximum operating temperature |
2N3904UB/TR Advantages vs Typical Alternatives
This transistor offers a highly efficient switching capability with a low saturation voltage, which reduces power dissipation compared to typical alternatives. Its consistent current gain and wide voltage handling enhance circuit reliability and accuracy. The device??s broad frequency response supports high-speed applications, making it an excellent choice for engineers focusing on power efficiency and integration in compact electronic systems.
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Typical Applications
- Signal amplification in low to medium power audio and switching circuits, where stable gain and low noise are essential for accurate signal processing.
- Switching elements in digital logic circuits and microcontroller interfaces, enabling efficient control of loads and peripheral devices.
- Driver stages for relay and indicator LEDs, providing reliable current amplification with minimal voltage loss.
- General-purpose amplification in industrial automation systems, supporting robust and repeatable performance under varying electrical conditions.
2N3904UB/TR Brand Info
The 2N3904UB/TR is produced by a leading semiconductor manufacturer known for delivering high-quality discrete components tailored for industrial and consumer electronics. This product line is recognized for its rigorous quality control, ensuring consistent electrical characteristics and durability. With extensive documentation and global availability, the transistor supports comprehensive design and sourcing needs for professional engineers and procurement teams.
FAQ
What is the maximum collector current for this transistor?
The maximum continuous collector current is rated at 200mA, which allows for use in a range of low-power amplification and switching applications without risking device damage.
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Can this transistor operate at high frequencies?
Yes, the transition frequency (fT) of 300MHz enables the transistor to function effectively in high-speed switching and amplification tasks, making it suitable for RF and fast digital circuits.
What voltage ranges can the transistor safely handle?
The device supports a collector-emitter voltage of up to 40V, collector-base voltage of 60V, and emitter-base voltage of 6V, providing flexibility across various voltage domains in electronic designs.
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Is this transistor compatible with PNP types for complementary circuits?
Yes, it is commonly paired with complementary PNP transistors in push-pull amplifier configurations and other complementary circuit designs, enhancing circuit balance and performance.
What is the typical gain range and how does it affect circuit design?
The DC current gain typically ranges from 100 to 300 at a collector current of 10mA. This gain ensures efficient signal amplification and helps reduce the number of amplification stages needed in a circuit.
