2N3879A-Transistor by ON Semiconductor | RF Power Transistor | TO-39 Package

2N3879A-Transistor Overview

The 2N3879A transistor is a high-performance NPN silicon transistor designed for medium-power amplifier and switching applications. It offers a reliable, robust solution with a focus on consistent gain and low noise characteristics, making it suitable for industrial and electronic circuit designs requiring stable amplification. Its construction supports dependable operation under varied electrical conditions, providing engineers with a trusted component for precision analog and switching functions. For sourcing and detailed technical support, consult IC Manufacturer.

2N3879A-Transistor Key Features

• High Current Gain: Ensures efficient signal amplification, reducing the need for additional stages in amplifier circuits.
• Medium Power Handling: Supports applications requiring moderate power dissipation, improving versatility across various designs.
• Low Noise Operation: Enhances signal integrity in sensitive analog applications, minimizing distortion and interference.
• Thermal Stability: Maintains performance consistency under varying temperature conditions, improving reliability in industrial environments.

2N3879A-Transistor Technical Specifications

2N3879A-Transistor Advantages vs Typical Alternatives

This transistor offers a balance of moderate power capability and low noise performance, which sets it apart from typical low-power or high-noise alternatives. Its robust voltage ratings and stable gain make it ideal for industrial amplifier and switching applications where reliability and signal clarity are critical. The enhanced power dissipation rating contributes to improved thermal management compared to standard small-signal transistors, ensuring longer operational life.

Typical Applications

• Medium-power audio and RF amplifier circuits requiring stable gain and low distortion for clear signal reproduction.
• Switching applications in industrial controls where reliable current handling and voltage tolerance are essential.
• Driver stages in power control systems benefiting from its robust collector current and power dissipation ratings.
• General-purpose amplification in instrumentation circuits demanding consistent performance across temperature ranges.

2N3879A-Transistor Brand Info

The 2N3879A transistor is a widely recognized discrete semiconductor device produced by multiple manufacturers adhering to standardized specifications. It is known within the electronics industry for its dependable medium-power characteristics and versatility in various circuit designs. The product’s quality and performance consistency make it a preferred choice for engineers and sourcing specialists seeking a proven transistor solution for industrial and analog applications.

FAQ

What are the maximum voltage ratings for this transistor?

The 2N3879A transistor supports a maximum collector-emitter voltage of 60 V, collector-base voltage up to 80 V, and emitter-base voltage of 7 V. These voltage limits define its operational boundaries to prevent breakdown and ensure safe use within specified electrical conditions.

Can this transistor handle high collector current?

Yes, it can handle a collector current up to 3 A, making it suitable for medium-power applications. This current rating enables it to drive loads requiring a substantial current without compromising reliability.

What is the typical gain range for the 2N3879A transistor?

The transistor exhibits a DC current gain (hFE) ranging from 40 to 120. This wide gain range allows flexibility in circuit design, accommodating different amplifier and switching requirements depending on the application.

How does the transistor perform in terms of frequency response?

The transition frequency (fT) is approximately 30 MHz, which allows it to operate effectively in moderate-frequency applications such as audio and some RF circuits, providing sufficient gain at these frequencies.

Is this transistor suitable for use in high-temperature environments?

Yes, the device demonstrates good thermal stability and power dissipation up to 30 W, which supports reliable operation in environments with varying temperatures. Proper heat sinking is recommended to optimize performance and longevity.