2N3879-Transistor by Motorola | High-Power RF Amplifier | TO-39 Metal Can Package

2N3879-Transistor Overview

The 2N3879 is a high-frequency NPN bipolar junction transistor designed for low-noise and wideband amplifier applications. It features a low noise figure, making it ideal for sensitive RF circuits and signal processing tasks. This transistor supports a maximum collector current of 50 mA and operates efficiently at voltages up to 15 V, enabling reliable performance in industrial and communication equipment. Its TO-18 metal can package ensures good thermal conductivity and durability under demanding operating conditions. For sourcing and further technical details, visit IC Manufacturer.

2N3879-Transistor Key Features

• Low Noise Figure: Provides superior signal clarity in RF amplification, reducing interference and enhancing system sensitivity.
• High Transition Frequency (fT): Supports high-frequency operation, enabling effective use in VHF and UHF stages of communication devices.
• Robust Collector Current Capability: Handles collector currents up to 50 mA, ensuring reliable operation under moderate power conditions.
• Durable TO-18 Package: Ensures enhanced heat dissipation and mechanical stability for long-term reliability in industrial environments.

2N3879-Transistor Technical Specifications

2N3879-Transistor Advantages vs Typical Alternatives

This transistor offers a compelling combination of low noise and high-frequency response, outperforming many general-purpose transistors in RF amplifier stages. Its robust current handling and stable gain characteristics provide consistent performance with less distortion. The TO-18 package enhances thermal management compared to plastic-encapsulated transistors, improving reliability in industrial and communication systems.

Typical Applications

• Low-noise RF amplifiers in communication receivers, where signal integrity and minimal interference are critical for maintaining clear transmission quality.
• Wideband amplifier stages for television and radio frequency circuits requiring stable gain across a broad frequency range.
• Intermediate frequency (IF) amplifiers in radio transceivers, enhancing sensitivity and selectivity in signal processing.
• General-purpose high-frequency amplification tasks in industrial sensor interfaces and instrumentation circuits.

2N3879-Transistor Brand Info

The 2N3879 transistor is manufactured under established semiconductor standards, ensuring consistent quality and performance. It is widely recognized in the electronics industry for its reliable operation in RF and high-frequency applications. Available from certified distributors, this device adheres to stringent testing protocols, making it a trusted choice for engineers and sourcing specialists requiring dependable transistor components.

FAQ

What is the maximum collector current for this transistor?

The 2N3879 supports a maximum collector current of 50 mA, allowing it to operate effectively in moderate power amplifier circuits without risking damage.

In what package is this transistor supplied, and why does it matter?

This device comes in a TO-18 metal can package, which offers superior thermal conductivity and mechanical durability compared to plastic packages, helping maintain stable operation in demanding environments.

What frequency range is suitable for this transistor?

With a transition frequency around 200 MHz, it is well-suited for VHF and lower UHF range applications, making it ideal for RF amplification and signal processing tasks.

How does the noise figure impact its performance?

A low noise figure of approximately 2.5 dB means the transistor adds minimal noise to the signal, which is crucial for maintaining high signal-to-noise ratios in sensitive RF circuits.

Can this transistor be used in general-purpose amplification circuits?

Yes, while optimized for low-noise and high-frequency applications, its stable gain and current handling also make it suitable for various general-purpose amplifier designs within its electrical limits.