2N3867S-Transistor by ON Semiconductor – NPN Amplifier Transistor, TO-18 Package

  • This transistor amplifies electrical signals efficiently, enhancing circuit performance in various electronic devices.
  • Its maximum voltage rating supports stable operation under typical load conditions, ensuring consistent functionality.
  • The compact package design allows for board-space savings, making it suitable for densely packed circuit layouts.
  • Ideal for switching applications, it helps control power flow effectively in industrial and consumer electronics.
  • Manufactured to meet standard quality tests, it offers dependable operation over extended use periods.
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2N3867S-Transistor Overview

The 2N3867S-Transistor is a high-performance NPN silicon transistor designed for medium power amplification and switching applications. With a maximum collector current of 1A and a collector-emitter voltage rating of 40V, it is suitable for use in audio amplifiers, signal processing, and general-purpose switching circuits. The device offers reliable operation within a wide temperature range and features a gain bandwidth product that supports high-frequency applications. Manufactured to meet stringent quality standards, this transistor ensures consistent performance and durability for industrial and commercial electronic designs. For detailed specifications and sourcing, visit IC Manufacturer.

2N3867S-Transistor Key Features

  • High current capacity: Supports collector currents up to 1A, enabling robust power amplification and switching tasks.
  • Moderate voltage rating: Collector-emitter voltage of 40V protects the device in intermediate voltage applications.
  • Reliable gain characteristics: Provides a current gain (hFE) between 40 and 160, ensuring effective signal amplification across various operating conditions.
  • Thermal stability: Operates efficiently within a junction temperature range up to 150??C, enhancing reliability under demanding thermal environments.

2N3867S-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Silicon
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (Ptot) 30 W
Current Gain (hFE) 40 to 160
Transition Frequency (fT) 100 MHz (typical)
Junction Temperature (TJ) -65??C to +150??C
Package Type TO-18 Metal Can

2N3867S-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of current handling, voltage rating, and gain suitable for medium power amplification and switching, outperforming many general-purpose transistors with lower current or voltage limits. Its metal TO-18 package provides superior thermal conductivity and reliability compared to plastic encapsulated alternatives. The device??s stable gain and high transition frequency enable efficient operation in high-frequency circuits, making it a preferred choice for engineers seeking robust performance without compromising on integration or thermal stability.

Typical Applications

  • Audio amplification circuits requiring medium power transistors for clean signal gain and reliable operation across a broad frequency range.
  • Switching regulators and control circuits in industrial electronics where moderate voltage and current ratings are essential.
  • High-frequency oscillator and driver stages in communication equipment benefiting from its transition frequency characteristics.
  • General-purpose amplification and switching tasks in consumer and industrial electronic devices.

2N3867S-Transistor Brand Info

The 2N3867S-Transistor is a classic semiconductor device widely recognized for its ruggedness and dependable performance. This product is manufactured by established semiconductor producers adhering to strict quality controls and industry standards. The brand emphasizes reliability and consistency, making the transistor a trusted component in legacy and modern designs. Its availability through authorized distributors ensures engineers and sourcing specialists easy access to genuine parts for critical applications.

FAQ

What is the maximum collector current rating of this transistor?

The transistor supports a maximum collector current of 1 ampere, allowing it to handle moderate power amplification and switching loads effectively within designed circuit parameters.

What package type does this transistor come in?

This device is housed in a TO-18 metal can package, which offers excellent thermal dissipation and mechanical durability compared to standard plastic packages.

Can this transistor be used in high-frequency applications?

Yes, the 2N3867S features a transition frequency around 100 MHz, making it suitable for moderate to high-frequency amplification and oscillator circuits.

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What voltage limits should be observed when using this transistor?

The maximum collector-emitter voltage is 40 volts, and the collector-base voltage is rated at 60 volts. Operating beyond these limits could damage the device.

Is this transistor suitable for audio amplifier designs?

Absolutely. With its reliable gain characteristics and power handling, this transistor is commonly employed in audio amplification circuits requiring stable and clean signal amplification.

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