2N3867P-Transistor-PIND Amplifier Transistor in PIND Package by [Brand Name]

2N3867P-Transistor-PIND Overview

The 2N3867P-Transistor-PIND is a high-performance PNP silicon transistor designed for applications requiring reliable switching and amplification. With a complementary NPN counterpart and robust electrical characteristics, this transistor supports medium power and medium frequency operations. It features a plastic encapsulated package, ensuring durability and ease of integration into various industrial circuits. Ideal for engineers and sourcing specialists, the device offers consistent gain and dependable operation under standard test conditions, making it a practical choice for amplification and switching roles in electronic design. For more details, visit IC Manufacturer.

2N3867P-Transistor-PIND Key Features

• Medium power gain: Provides reliable amplification with a typical DC current gain (hFE) suitable for general-purpose applications.
• Complementary transistor design: Works seamlessly with the 2N3906 NPN transistor, easing push-pull amplifier configurations.
• Plastic encapsulation: Ensures mechanical protection and thermal stability for long-term reliability in circuit boards.
• Moderate collector current rating: Supports currents up to 200mA, accommodating a range of switching and amplification tasks.

2N3867P-Transistor-PIND Technical Specifications

2N3867P-Transistor-PIND Advantages vs Typical Alternatives

This transistor stands out for its balanced combination of moderate power handling and frequency response, offering engineers a reliable option where typical alternatives may either fall short in gain consistency or power capacity. Its complementary pairing capability improves circuit design flexibility, and the plastic encapsulation enhances durability compared to older metal-can types, ensuring stable performance in industrial environments.

Typical Applications

• General-purpose amplification and switching circuits where medium power and reliable gain are required, such as low-noise preamplifiers or driver stages.
• Complementary push-pull amplifier circuits for audio or signal processing applications.
• Signal modulation and oscillators benefiting from the transistor’s transition frequency and stable parameters.
• Industrial control systems requiring robust, easy-to-integrate transistor solutions within compact circuit layouts.

2N3867P-Transistor-PIND Brand Info

The 2N3867P-Transistor-PIND is manufactured and supplied by established semiconductor producers, known for delivering consistent quality and adherence to industry standards. This product is part of the widely recognized 2N3xxx transistor family, trusted by engineers for decades in industrial and commercial electronics. The brand ensures thorough testing and quality control to meet demanding application requirements.

FAQ

What type of transistor is the 2N3867P-Transistor-PIND?

The device is a PNP bipolar junction transistor (BJT) designed to handle medium power and frequency ranges, suitable for switching and amplification tasks within various electronics circuits.

What is the maximum collector current rating for this transistor?

The transistor supports a maximum continuous collector current of 200 milliamperes, making it suitable for moderate load conditions in industrial and general-purpose applications.

How does the 2N3867P-Transistor-PIND perform in terms of gain?

This transistor offers a DC current gain (hFE) ranging from 40 to 300, enabling effective amplification with stable performance across specified operating conditions.

What package type does this transistor come in?

The product is housed in a plastic TO-18 package, providing mechanical protection and ease of mounting on printed circuit boards while supporting efficient heat dissipation.

Is this transistor suitable for high-frequency applications?

With a transition frequency (fT) of approximately 150 MHz, the transistor can be effectively used in moderate frequency amplifier and oscillator circuits, though it is not intended for very high-frequency RF applications.