2N3867-Transistor by ON Semiconductor – NPN Amplifier Transistor, TO-18 Package

2N3867-Transistor Overview

The 2N3867 is a high-frequency NPN silicon transistor designed for RF amplification and switching applications. Featuring a transition frequency (fT) of 150 MHz, this transistor excels in medium-power amplifier stages where linearity and gain are critical. Its reliable construction and consistent electrical characteristics make it suitable for industrial and communication equipment. The 2N3867 ensures effective performance in oscillator circuits and general-purpose amplification, offering engineers a robust component for high-frequency designs. For detailed sourcing and specifications, visit the IC Manufacturer website.

2N3867-Transistor Key Features

• High transition frequency: With an fT of 150 MHz, it provides excellent gain at high frequencies, enabling effective RF signal amplification.
• Medium power handling: Supports a collector current up to 100 mA, suitable for moderate power stages in communication circuits.
• Low noise operation: The transistor??s design minimizes noise contribution, improving signal integrity in sensitive RF applications.
• Robust electrical limits: Maximum collector-emitter voltage of 25 V ensures reliable operation under typical industrial conditions.

2N3867-Transistor Technical Specifications

2N3867-Transistor Advantages vs Typical Alternatives

This transistor stands out for its high transition frequency combined with moderate power handling, delivering superior gain and linearity in RF circuits compared to typical low-frequency transistors. Its robust voltage ratings and low noise characteristics add reliability and signal clarity, making it preferable in communication and industrial environments where precise amplification and switching are critical.

Typical Applications

• RF amplifier stages in communication devices, leveraging the transistor??s high-frequency gain and low noise to boost signal strength with minimal distortion.
• Oscillator circuits requiring stable and consistent transistor characteristics for frequency generation.
• Switching components in medium-power control circuits, benefiting from reliable collector current and voltage ratings.
• General-purpose amplification in industrial electronics where moderate power and frequency response are required.

2N3867-Transistor Brand Info

The 2N3867 transistor is a well-established semiconductor device widely respected in the electronics industry for its dependable performance in RF and amplification roles. Manufactured under stringent quality standards, it is offered by multiple reputable brands specializing in discrete semiconductors. This product is commonly available in a TO-18 metal can package, ensuring durability and consistent thermal performance for demanding industrial applications.

FAQ

What is the maximum collector current rating for this transistor?

The maximum collector current for this transistor is 100 mA. This rating ensures it can handle medium power levels suitable for many RF amplification and switching applications without risk of damage.

Can this transistor be used in RF amplifier circuits?

Yes, the transistor??s transition frequency of 150 MHz and low noise characteristics make it ideal for RF amplifier stages in communication devices and similar high-frequency applications.

What package does this transistor come in?

This transistor is typically supplied in the TO-18 metal can package, which provides good thermal dissipation and mechanical protection, making it suitable for industrial and high-reliability environments.

Is the 2N3867 suitable for switching applications?

Yes, with its collector-emitter voltage rating of 25 V and collector current capability of 100 mA, it can effectively function as a switching device in moderate power circuits.

What is the typical current gain range for this device?

The DC current gain (hFE) typically ranges between 40 and 100, providing good amplification levels for signal processing in various analog circuits.