2N3810L-Dual-Transistor by 2N ?C High-Speed Amplifier, TO-92 Package

  • This dual transistor provides efficient signal amplification, improving circuit performance and response time.
  • Its high current gain enhances switching speed, which is critical for precise electronic control applications.
  • The compact CBZ package minimizes board space, allowing for more compact and lightweight device designs.
  • Ideal for audio amplifiers and switching circuits, it ensures stable operation under varying load conditions.
  • Manufactured with strict quality controls, the component offers consistent reliability in demanding environments.
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产品上方询盘

2N3810L-Dual-Transistor Overview

The 2N3810L-Dual-Transistor is a high-performance, matched pair of NPN bipolar junction transistors designed for low noise and high gain applications. Engineered for precision in amplification and switching circuits, this dual transistor package optimizes board space while delivering consistent electrical characteristics. Its complementary transistor pairs ensure symmetrical operation, making it suitable for analog signal processing, differential amplifiers, and compact multi-stage amplifiers. Manufactured with reliable semiconductor processes, it offers stable operation over a wide temperature range. For detailed product sourcing and datasheets, visit the IC Manufacturer.

2N3810L-Dual-Transistor Key Features

  • Matched transistor pairs: Ensures precise gain matching, critical for differential amplifier designs and reducing distortion.
  • Low noise operation: Ideal for audio and instrumentation circuits requiring high signal integrity.
  • Compact dual package: Saves PCB space and simplifies layout in compact electronic designs.
  • Wide frequency response: Supports applications requiring stable performance across audio to low RF frequencies.

2N3810L-Dual-Transistor Technical Specifications

Parameter Value Unit
Transistor Type NPN Bipolar Junction ?C
Collector-Emitter Voltage (VCEO) 30 V
Collector Current (IC) 100 mA
Power Dissipation (Ptot) 350 mW
Current Gain (hFE) 50 to 300 ?C
Transition Frequency (fT) 100 MHz
Noise Figure Low dB
Operating Temperature Range -55 to +150 ??C

2N3810L-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers precise gain matching and low noise characteristics that surpass typical single-transistor alternatives, enhancing signal fidelity in sensitive analog circuits. The integrated dual package improves space efficiency and simplifies assembly compared to discrete transistor pairs, while maintaining robust electrical performance and reliability under various operating conditions.

Typical Applications

  • Differential amplifier circuits where matched transistor pairs reduce offset and distortion, improving linearity and signal accuracy.
  • Low-noise preamplifiers in audio and instrumentation systems requiring clean signal amplification.
  • Switching circuits benefiting from the transistor??s high gain and fast response times.
  • Compact multi-stage amplification modules demanding space-saving dual transistor integration.

2N3810L-Dual-Transistor Brand Info

The 2N3810L-Dual-Transistor is a product offered by leading semiconductor manufacturers specializing in industrial-grade bipolar transistors. Known for their rigorous quality controls and process consistency, the brand ensures each component meets stringent electrical and thermal performance benchmarks. This device is part of a series designed to support precision analog and switching applications, reflecting the manufacturer??s commitment to reliability and functional excellence in industrial and commercial electronics.

FAQ

What is the maximum collector current rating for the 2N3810L-Dual-Transistor?

The maximum collector current (IC) rating for this device is 100 mA. This rating ensures reliable operation within typical analog and switching applications without risk of thermal or electrical overload.

How does the matched transistor pair benefit circuit design?

Matched transistor pairs provide closely matched electrical characteristics such as gain and leakage currents, which are essential for balanced circuit designs like differential amplifiers. This reduces distortion and improves overall circuit accuracy.

Can the device operate at high frequencies?

Yes, the transistor has a transition frequency (fT) of approximately 100 MHz, enabling it to handle low RF and wideband amplification tasks effectively within its specified operating range.

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产品中间询盘

What is the typical power dissipation for this dual transistor?

The typical total power dissipation is rated at 350 mW, allowing the device to maintain stable thermal performance in compact electronic assemblies when proper heat management is applied.

Is this transistor suitable for low-noise audio applications?

Absolutely. Its low noise figure makes it well-suited for audio preamplifiers and instrumentation circuits where maintaining signal integrity is critical.

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