2N3810A-Dual-Transistor by 2N | High-Speed Switching Transistor | TO-39 Package

  • This dual transistor provides reliable signal amplification, enhancing circuit performance and stability.
  • Featuring matched transistor pairs, it ensures consistent gain and reduces distortion in analog applications.
  • Its compact package allows efficient use of board space, simplifying design in tight layouts.
  • Ideal for audio preamplifiers, this component improves sound clarity and reduces noise interference.
  • Manufactured under strict quality controls, it delivers long-term operational reliability in various environments.
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2N3810A-Dual-Transistor Overview

The 2N3810A-Dual-Transistor is a high-performance silicon NPN transistor device featuring two matched transistors in a single package. Designed for precision amplification and switching applications, it offers reliable operation across a broad voltage and current range. This dual-transistor configuration simplifies circuit design by providing closely matched transistor pairs, ideal for differential amplifiers and current mirror circuits. Engineered with consistent gain characteristics and low leakage currents, it ensures optimal stability and efficiency in industrial and commercial electronics. For quality assurance and detailed product support, visit the IC Manufacturer website.

2N3810A-Dual-Transistor Key Features

  • Dual Matched NPN Transistors: Ensures precise gain matching, improving linearity and signal fidelity in analog circuits.
  • High Current Gain (hFE): Provides excellent amplification performance, allowing for efficient switching and low distortion.
  • Low Leakage Currents: Enhances reliability and reduces power loss, critical for battery-powered and low-noise applications.
  • Robust Voltage and Current Ratings: Supports operations in demanding environments, facilitating integration in various industrial electronics.

2N3810A-Dual-Transistor Technical Specifications

ParameterSpecification
Transistor TypeNPN Dual Transistor
Collector-Emitter Voltage (VCEO)30 V
Collector Current (IC)100 mA
DC Current Gain (hFE)50 to 300 (depending on IC and test conditions)
Power Dissipation (Ptot)310 mW
Transition Frequency (fT)80 MHz (typical)
Package TypeTO-72 Metal Can
Operating Temperature Range-55??C to +150??C

2N3810A-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers superior gain matching and low leakage currents compared to typical single-transistor alternatives. Its integrated dual configuration reduces component count and board space, enhancing circuit compactness and reliability. The device??s robust voltage and temperature ratings support stable performance under harsh conditions, making it a preferred choice for precision analog and switching applications where accuracy and dependability are critical.

Typical Applications

  • Differential Amplifiers: The matched transistor pairs enable highly accurate differential signal processing, essential in sensor interfacing and audio amplification circuits.
  • Current Mirror Circuits: Ideal for stable current replication in analog integrated circuits and biasing networks.
  • Low Noise Amplifiers: Suitable for applications requiring minimal noise interference due to low leakage and consistent gain.
  • Switching Circuits: Reliable switching performance in industrial control systems and signal modulation tasks.

2N3810A-Dual-Transistor Brand Info

The 2N3810A-Dual-Transistor is manufactured by a leading semiconductor supplier known for stringent quality control and consistent device performance. This product reflects the company??s commitment to delivering reliable, high-precision transistor solutions tailored for industrial and commercial electronic markets. The dual-transistor design is a hallmark of engineering excellence, supporting a wide range of analog and switching applications globally.

FAQ

What is the primary benefit of using a dual transistor like the 2N3810A?

The primary benefit is the matched transistor pair within a single package, which ensures closely matched electrical characteristics. This feature simplifies circuit design for differential amplifiers and current mirrors by providing consistent gain and performance without the need for external matching.

What are the maximum voltage and current ratings for this device?

The device supports a maximum collector-emitter voltage of 30 volts and a collector current of up to 100 milliamps, making it suitable for moderate power applications in analog and switching circuits.

How does the package type affect the transistor??s performance?

The TO-72 metal can package offers improved thermal dissipation and mechanical durability compared to plastic packages. This enhances reliability in industrial environments where temperature variation and physical stress are common.

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Can this transistor be used in high-frequency applications?

Yes, with a typical transition frequency of 80 MHz, this transistor is suitable for moderate high-frequency applications, including RF amplifiers and signal processing circuits requiring fast switching and gain.

What operating temperature range does the 2N3810A support?

The device is rated for operation from -55??C to +150??C, enabling use in harsh environments and temperature-sensitive industrial applications.

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