2N3792-Transistor by ON Semiconductor ?C High-Power NPN Transistor, TO-3 Package

  • Acts as a reliable amplifier or switch, enabling efficient control of electrical signals in circuits.
  • Offers a specific voltage rating that ensures stable operation under standard electronic conditions.
  • Encased in a compact package type that facilitates easy integration and conserves board space.
  • Ideal for use in power regulation or signal amplification, improving performance in electronic devices.
  • Manufactured to meet consistent quality standards, promoting long-term durability and dependable function.
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2N3792-Transistor Overview

The 2N3792 transistor is a high-power NPN silicon bipolar junction transistor designed for general-purpose amplification and switching applications. It features robust construction capable of handling collector currents up to 10A and collector-emitter voltages reaching 100V, making it suitable for demanding industrial circuits. With a maximum power dissipation of 125W, this device supports high-efficiency performance in power regulation and motor control. Its package ensures effective heat dissipation, enhancing reliability in continuous operation. Available from IC Manufacturer, this transistor is an ideal solution for engineers requiring a durable and efficient power transistor for medium to high power applications.

2N3792-Transistor Key Features

  • High collector current capacity: Supports up to 10A, enabling robust power handling in demanding industrial circuits.
  • Collector-emitter voltage rating of 100V: Allows operation in high-voltage environments, improving versatility across applications.
  • High power dissipation of 125W: Ensures efficient thermal management and reliable continuous operation under heavy loads.
  • Silicon NPN construction: Offers stable electrical characteristics and consistent performance over varying temperature ranges.

2N3792-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 140 V
Emitter-Base Voltage (VEBO) 7 V
Collector Current (IC) 10 A
Power Dissipation (PD) 125 W
DC Current Gain (hFE) 20-70 (typical)
Transition Frequency (fT) 3 MHz
Operating Junction Temperature (TJ) +200 ??C
Storage Temperature Range -65 to +200 ??C

2N3792-Transistor Advantages vs Typical Alternatives

This transistor delivers superior current and voltage handling compared to many typical small-signal transistors, making it well-suited for power-intensive industrial uses. Its high power dissipation rating ensures efficient heat management, reducing thermal stress and improving long-term reliability. Additionally, the moderate gain and stable frequency response provide consistent performance, enabling more precise control in switching and amplification tasks than many generic alternatives.

Typical Applications

  • Power amplifiers in audio and industrial control equipment requiring robust high-current switching and amplification capabilities.
  • Motor control circuits where sustained high current and voltage ratings are essential for reliable operation.
  • Voltage regulation and power supply circuits benefiting from its high power dissipation and voltage tolerance.
  • Switching devices in industrial automation systems demanding durable and thermally stable transistors.

2N3792-Transistor Brand Info

The 2N3792 transistor is a well-established semiconductor component offered by trusted manufacturers specializing in power transistors. Known for its rugged design and consistent electrical performance, it forms part of a family of transistors engineered for high-power applications. This product is widely recognized in the industry for meeting stringent quality standards and providing dependable operation in both commercial and industrial electronic systems.

FAQ

What is the maximum collector current supported by this transistor?

The transistor supports a maximum continuous collector current of 10 amperes, enabling it to handle substantial loads in power amplification and switching circuits without degradation.

What voltage ratings are critical for safe operation of this device?

The key voltage ratings include a collector-emitter voltage of up to 100 volts, a collector-base voltage of 140 volts, and an emitter-base voltage of 7 volts. These parameters define the maximum voltages the transistor can withstand without damage.

How does the power dissipation rating affect device performance?

A power dissipation rating of 125 watts allows the transistor to efficiently convert and manage high power levels with reduced risk of overheating, which is critical for maintaining performance in continuous high-current applications.

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Is this transistor suitable for high-frequency applications?

With a transition frequency around 3 MHz, the transistor is more suited for medium-frequency applications rather than high-frequency RF circuits, making it ideal for power and switching roles in industrial electronics.

What package type is used for this transistor and how does it aid thermal management?

The transistor typically comes in a TO-3 metal can package, which provides excellent heat dissipation through its metal casing and mounting options, helping to maintain junction temperature within safe limits during operation.

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