2N3771-Transistor Overview
The 2N3771 is a high-power NPN bipolar junction transistor designed for medium to high voltage and high current applications. It offers robust performance with a collector current rating up to 15A and a collector-emitter voltage of 100V, making it suitable for power amplification and switching tasks. Its rugged construction ensures reliable operation in demanding industrial environments. Engineers and sourcing specialists will appreciate the device??s capability to handle substantial power dissipation, up to 150W, while maintaining stable gain characteristics. This transistor is a dependable choice for applications requiring efficient high-current switching and linear amplification. For authoritative procurement, visit IC Manufacturer.
2N3771-Transistor Technical Specifications
| Parameter | Value | Unit | Description |
|---|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V | Maximum voltage between collector and emitter |
| Collector-Base Voltage (VCBO) | 120 | V | Maximum voltage between collector and base |
| Emitter-Base Voltage (VEBO) | 7 | V | Maximum voltage between emitter and base |
| Collector Current (IC) | 15 | A | Maximum continuous collector current |
| Power Dissipation (PD) | 150 | W | Maximum power dissipation at 25??C case temperature |
| DC Current Gain (hFE) | 20 to 70 | ?C | Typical gain at rated current |
| Transition Frequency (fT) | 4 | MHz | Frequency at which gain drops to unity |
| Operating Junction Temperature (TJ) | 200 | ??C | Maximum junction temperature rating |
2N3771-Transistor Key Features
- High collector current capacity: Supports up to 15A, enabling robust power handling in demanding circuits.
- Wide voltage ratings: Collector-emitter voltage up to 100V ensures suitability for medium-power switching and amplification tasks.
- High power dissipation: With 150W dissipation capability, it manages thermal stress efficiently, enhancing reliability in industrial environments.
- Stable gain characteristics: Maintains consistent DC current gain between 20 and 70, facilitating predictable amplification performance.
- Thermally robust design: Maximum junction temperature of 200??C supports operation in elevated temperature conditions.
- Reliable switching speed: Transition frequency of 4MHz allows for effective switching in moderate frequency circuits.
Typical Applications
- Power amplifiers in audio and RF systems where high current and voltage handling are essential for signal fidelity and output power.
- Industrial motor control circuits that require reliable high-current switching and robust voltage tolerance.
- Power supply regulators and voltage converters benefiting from efficient thermal dissipation and stable gain.
- Switching applications in heavy-duty relay drivers and solenoid controls, leveraging high collector current and power ratings.
2N3771-Transistor Advantages vs Typical Alternatives
This transistor offers superior power handling and voltage rating compared to many standard BJTs, making it ideal for applications demanding high current and thermal dissipation. Its stable gain range and robust junction temperature tolerance contribute to improved reliability and consistent performance. These advantages translate into fewer failures and better efficiency in power amplification and switching circuits, positioning it as a reliable alternative to lower-power or less thermally capable devices.
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