2N3763L-Transistor ON Semiconductor Power Transistor TO-3 Metal Can Package

  • This transistor amplifies electrical signals, enabling effective control in various electronic circuits.
  • It features a voltage rating that ensures stable operation under typical load conditions.
  • The package design offers a compact footprint, allowing efficient use of board space in device layouts.
  • Ideal for switching applications, it helps manage power delivery with reliable performance.
  • Manufactured to meet standard quality controls, ensuring consistent function and longevity in use.
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2N3763L-Transistor Overview

The 2N3763L is a high-power NPN bipolar junction transistor designed for robust industrial and power amplification applications. It offers a collector current rating up to 15A and a collector-emitter voltage of 100V, making it suitable for demanding switching and linear amplifier circuits. With a gain bandwidth product of 10 MHz and a power dissipation of 160W, this transistor ensures reliable performance in high-current environments. Its TO-3 metal can package provides excellent thermal conductivity, enhancing device longevity and stability under stress. This component is widely adopted for power management and control systems where efficiency and durability are critical. For detailed specifications, visit IC Manufacturer.

2N3763L-Transistor Key Features

  • High collector current capacity: Supports up to 15A, enabling efficient handling of heavy load currents.
  • Robust voltage rating: Collector-emitter voltage of 100V ensures reliable operation in high-voltage circuits.
  • Superior power dissipation: With a maximum power rating of 160W, it maintains stable performance under significant thermal stress.
  • Wide gain bandwidth: 10 MHz gain bandwidth product allows effective use in both switching and amplification roles.
  • TO-3 metal can package: Provides excellent heat dissipation and mechanical durability.
  • High DC current gain (hFE): Ranges between 10 and 70, facilitating better amplification efficiency.
  • Low saturation voltages: Enhances switching efficiency and reduces power losses in switching applications.

2N3763L-Transistor Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (VCEO)100V
Collector-Base Voltage (VCBO)140V
Emitter-Base Voltage (VEBO)7V
Collector Current (IC)15A
Power Dissipation (PD)160W
DC Current Gain (hFE)10 to 70??
Gain Bandwidth Product (fT)10MHz
Transition Frequency10MHz
Junction Temperature (TJ) Max200??C
Package TypeTO-3 Metal Can??

2N3763L-Transistor Advantages vs Typical Alternatives

This transistor offers a superior combination of high current handling and voltage tolerance compared to typical alternatives in its class. Its robust power dissipation rating and metal can package provide enhanced thermal management, ensuring stable operation under strenuous conditions. These features contribute to improved reliability and longer lifecycle in power amplification and switching applications. Additionally, the gain bandwidth and current gain specifications facilitate efficient signal amplification, making it a preferred choice for engineers seeking durable and high-performance transistor solutions.

Typical Applications

  • Power Amplifiers: Ideal for high-power audio and RF amplifiers where sustained current and voltage handling are required for clean signal amplification.
  • Switching Regulators: Used in industrial power supplies and voltage regulation circuits due to its ability to efficiently switch large currents.
  • Motor Control Circuits: Suitable for driving motors and actuators in automated systems with stable current delivery and thermal robustness.
  • General Purpose High-Power Switching: Employed in relay drivers and other control applications requiring reliable high current switching.

2N3763L-Transistor Brand Info

The 2N3763L transistor is a trusted industrial-grade component manufactured to stringent quality standards for power electronics. It is recognized for its rugged TO-3 metal package, which ensures superior heat dissipation and mechanical integrity. This product line is widely supported by established semiconductor producers known for delivering durable, high-performance transistors suitable for demanding industrial and commercial electronics designs. Its proven reliability makes it a go-to solution for engineers and sourcing specialists requiring consistency and longevity in power device performance.

FAQ

What are the maximum voltage ratings for the 2N3763L transistor?

The transistor supports a maximum collector-emitter voltage of 100V, collector-base voltage of 140V, and emitter-base voltage of 7V. These ratings ensure safe operation in a wide range of industrial voltage environments.

How much current can this transistor handle continuously?

This device can handle a collector current up to 15A continuously, making it suitable for high-current power applications such as motor control and power amplification.

What package type does the 2N3763L use, and why is it important?

It uses a TO-3 metal can package, which provides excellent thermal conductivity and mechanical durability. This packaging helps maintain device stability under high power dissipation and harsh operating conditions.

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What is the typical power dissipation capability of this transistor?

The maximum power dissipation rating is 160W, allowing the transistor to operate effectively in circuits that require significant energy handling without overheating.

Can the 2N3763L be used in high-frequency applications?

While primarily designed for power applications, its gain bandwidth product of 10 MHz allows it to function adequately in moderate frequency switching and amplification tasks, though it is not optimized for very high-frequency circuits.

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