2N3762L-Transistor Overview
The 2N3762L transistor is a high-power NPN silicon device designed for medium to high voltage switching and linear amplification applications. With a collector-emitter voltage rating of up to 100V and a collector current capacity of 10A, it supports demanding industrial and power management circuits. Its robust construction ensures reliable operation under elevated temperatures, making it suitable for rugged environments. The device delivers efficient performance with a gain bandwidth product suitable for audio frequency and low-frequency power amplification. Engineers and sourcing specialists can rely on this transistor for its balanced combination of power handling and switching speed. For more detailed information, please visit IC Manufacturer.
2N3762L-Transistor Key Features
- High collector current capacity: Supports continuous currents up to 10A, enabling high-power switching and amplification tasks with confidence.
- Collector-emitter voltage rating of 100V: Allows operation in medium voltage circuits, providing flexibility in design and application scope.
- Low saturation voltage: Minimizes power dissipation and improves efficiency in switching applications.
- Robust thermal performance: Designed to operate reliably at elevated junction temperatures, ensuring longevity in harsh industrial environments.
2N3762L-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 100 | V |
| Collector-Base Voltage (VCBO) | 120 | V |
| Emitter-Base Voltage (VEBO) | 7 | V |
| Collector Current (IC) | 10 | A |
| Power Dissipation (Ptot) | 80 | W |
| DC Current Gain (hFE) | 20?C70 | ?C |
| Transition Frequency (fT) | 3 | MHz |
| Operating Junction Temperature (Tj) | +200 | ??C |
2N3762L-Transistor Advantages vs Typical Alternatives
This transistor offers a superior blend of high voltage and current handling capabilities with low saturation voltage compared to typical alternatives. Its wide operating temperature range improves reliability in industrial settings. The device??s moderate gain and frequency response are optimized for power amplification and switching, providing engineers with a dependable component that balances performance and durability without sacrificing efficiency.
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Typical Applications
- Power amplifier stages in audio frequency equipment, where high current and voltage handling are essential for driving speakers and other loads.
- Switching regulators and power supply circuits requiring reliable medium-voltage switching components with robust thermal characteristics.
- Industrial motor control circuits that demand high current capacity and stable operation under varying load conditions.
- General-purpose switching applications in automation and control systems where dependable transistor performance is critical.
2N3762L-Transistor Brand Info
The 2N3762L transistor is a recognized, industry-standard silicon NPN device widely adopted for power switching and amplification roles across various manufacturers. It is known for its dependable electrical characteristics, rugged construction, and ease of integration into existing circuits. This product typically comes in a TO-3 metal can package, offering excellent thermal dissipation and mechanical robustness, making it a preferred choice for high-reliability industrial electronics.
FAQ
What is the maximum collector current rating for this transistor?
The maximum continuous collector current rating is 10 amperes, allowing it to handle high-current loads in switching and amplification applications safely.
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What voltage levels can this transistor withstand?
This transistor can handle a maximum collector-emitter voltage of 100 volts and a collector-base voltage of 120 volts, making it suitable for medium voltage circuits.
What package type does this transistor come in?
The device is typically housed in a TO-3 metal can package, which ensures effective heat dissipation and mechanical stability in industrial environments.
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What is the typical DC current gain (hFE) range?
The DC current gain ranges between 20 and 70, supporting moderate amplification suitable for power and switching applications.
Can this transistor operate at high temperatures?
Yes, it is rated for junction temperatures up to 200??C, making it reliable in harsh thermal conditions often encountered in industrial settings.







