2N3749-Transistor NPN General Purpose Amplifier TO-92 Package by ON Semiconductor

2N3749-Transistor Overview

The 2N3749 transistor is a silicon NPN bipolar junction transistor designed for use in low to medium power amplification and switching applications. Offering a maximum collector current of 200mA and a collector-emitter voltage rating of 40V, this device is well-suited for general-purpose electronic circuits requiring reliable performance. With a gain bandwidth product typically reaching 100MHz, the transistor supports moderate frequency signal amplification, making it valuable in signal processing and driver circuits. Its TO-18 metal can package ensures enhanced thermal dissipation and mechanical durability. For detailed sourcing and manufacturing information, visit IC Manufacturer.

2N3749-Transistor Technical Specifications

2N3749-Transistor Key Features

• High frequency gain: With a transition frequency up to 100MHz, it supports efficient signal amplification in RF and audio circuits.
• Robust voltage ratings: Collector-emitter voltage rating of 40V enables operation in a broad range of low-to-medium power applications.
• Wide gain range: DC current gain from 40 to 300 provides design flexibility for amplification and switching tasks.
• Compact TO-18 metal can packaging: Enhances heat dissipation and mechanical stability for improved reliability in demanding environments.

Typical Applications

• Signal amplification in audio and intermediate frequency (IF) stages of communication equipment, where moderate power and frequency response are essential.
• Switching elements in low-power control circuits requiring reliable transistor switching performance.
• Driver stages for small motors or relays within industrial control systems.
• General-purpose amplification in analog circuits, including sensor interface and signal conditioning modules.

2N3749-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance, gain, and frequency response that outperforms many generic low-power transistors. Its TO-18 metal can package improves thermal handling compared to plastic encapsulated alternatives, enhancing long-term reliability. The wide DC gain range allows engineers to optimize circuit performance without needing multiple part numbers. Overall, it provides precise switching and amplification capabilities with consistent characteristics, making it a dependable choice for industrial and communication designs.

2N3749-Transistor Brand Info

The 2N3749 transistor is a widely recognized industrial semiconductor device originally standardized in the JEDEC register, typically manufactured by several reputable semiconductor vendors such as ON Semiconductor and Fairchild Semiconductor. These manufacturers provide stringent quality controls ensuring consistent electrical performance and reliability. The device is known for its long-standing presence in the electronics market, supported by comprehensive datasheets and application notes, making it a go-to transistor for engineers requiring proven, general-purpose NPN devices in diverse electronic systems.

FAQ

What is the maximum collector current of the 2N3749 transistor?

The maximum collector current (I_C) for this transistor is 200 milliamps. This rating makes it suitable for low to medium power amplification and