2N3740A-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by 2N3740A

  • This transistor amplifies electrical signals, enabling improved control in various electronic circuits.
  • It features a specific gain characteristic that ensures consistent performance in signal amplification tasks.
  • The compact package design allows for efficient board space utilization and simplifies circuit layout.
  • Ideal for switching applications, it supports reliable operation in devices requiring fast and stable response.
  • Manufactured to meet standard quality benchmarks, ensuring dependable function over extended use.
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2N3740A-Transistor Overview

The 2N3740A is a silicon NPN bipolar junction transistor designed for medium power amplification and switching applications. It features a high voltage rating combined with a moderate current capacity, making it suitable for a variety of industrial and electronic control circuits. Known for its reliable performance in linear and switching modes, this transistor supports robust operation in audio amplifiers, driver stages, and general-purpose circuits. Engineered to offer consistent gain and fast switching speeds, the device aligns well with demanding industrial environments. For detailed specifications and sourcing, visit IC Manufacturer.

2N3740A-Transistor Key Features

  • High voltage tolerance: The transistor??s maximum collector-emitter voltage supports operation in circuits requiring up to 100 V, enhancing design flexibility.
  • Moderate collector current handling: With a maximum collector current rating around 1 A, it is well-suited for medium power loads.
  • Good DC current gain (hFE): Ensures efficient amplification with gain values suitable for linear amplification and switching applications.
  • Low saturation voltage: Improves switching efficiency and reduces power loss in switching applications.
  • Robust packaging: The TO-18 metal can package provides improved thermal conductivity and mechanical reliability.
  • Fast switching speed: Supports efficient operation in high-frequency circuits and pulse amplifier designs.
  • Temperature stability: Maintains performance across a wide operating temperature range typical for industrial environments.

2N3740A-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 100 V
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40?C300 ??
Transition Frequency (fT) 30 MHz
Junction Temperature (TJ) +150 ??C

2N3740A-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of high voltage capacity and moderate current handling compared to typical low-power alternatives. Its TO-18 metal can package enhances thermal dissipation and mechanical stability, outperforming plastic encapsulated devices in harsh conditions. The wide DC current gain range supports flexible circuit design, while low saturation voltage reduces switching losses. These factors make it a reliable choice for engineers prioritizing durability and efficiency in amplification and switching roles within industrial electronics.

Typical Applications

  • Medium power audio amplifier stages where linear gain and low distortion are critical, leveraging the transistor??s stable gain and frequency response.
  • Switching circuits in industrial control systems requiring reliable on/off operation with moderate current loads.
  • Driver stages for relays and solenoids where voltage withstand and current capability meet application demands.
  • Signal amplification in instrumentation systems that need precise gain and low noise performance over a wide temperature range.

2N3740A-Transistor Brand Info

The 2N3740A transistor is a widely recognized discrete semiconductor device manufactured by leading suppliers specializing in industrial-grade components. It is built to meet stringent quality and reliability standards, ensuring consistent performance across various electronic applications. The product??s longstanding presence in the market underscores its trusted status for engineers sourcing robust transistors for amplification and switching tasks. Its metal can packaging and well-documented specifications provide assurance for design engineers focused on durability and predictable electrical characteristics.

FAQ

What is the maximum voltage the 2N3740A transistor can handle?

The maximum collector-emitter voltage (VCEO) for this transistor is rated at 100 volts. This allows it to operate safely in circuits where higher voltage handling is required, such as industrial control or amplifier stages.

What type of transistor is the 2N3740A?

This is an NPN bipolar junction transistor designed for medium power amplification and switching. It uses silicon technology and is packaged in a TO-18 metal can for robust mechanical and thermal performance.

What are typical applications for this transistor?

It is commonly used in medium power audio amplifiers, switching circuits, relay drivers, and instrumentation signal amplification. Its voltage and current ratings suit a range of industrial and general-purpose electronics uses.

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How does the packaging affect the transistor??s performance?

The TO-18 metal can package improves heat dissipation and provides enhanced mechanical protection compared to plastic packages. This packaging choice supports durability and reliability in demanding environments.

What is the typical DC current gain range for this device?

The DC current gain (hFE) typically ranges between 40 and 300 depending on collector current and operating conditions, allowing flexible amplification ratios for different circuit designs.

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