2N3740-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control of current in electronic circuits.
  • It features a high voltage rating, ensuring stable operation in demanding signal amplification tasks.
  • The compact package design allows for board-space savings, facilitating integration into tight circuit layouts.
  • Commonly used in audio amplification, it improves sound clarity by maintaining signal integrity.
  • Manufactured to meet standard quality controls, it offers reliable performance under typical operating conditions.
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产品上方询盘

2N3740-Transistor Overview

The 2N3740 is a general-purpose NPN bipolar junction transistor designed for amplification and switching applications in industrial electronics. With a maximum collector current of 200mA and a collector-emitter voltage rating up to 60V, it offers reliable performance in medium power circuits. Its silicon planar epitaxial structure ensures stable operation with consistent gain characteristics, making it suitable for audio amplifiers, signal processing, and other analog functions. This transistor provides dependable switching speed and power dissipation capabilities, delivering robustness in diverse electronic designs. For sourcing reliable components, visit IC Manufacturer for detailed product availability and support.

2N3740-Transistor Key Features

  • Medium power handling: Supports collector currents up to 200mA, enabling effective control of moderate loads in amplification and switching circuits.
  • High voltage tolerance: Collector-emitter voltage rating of 60V allows operation in circuits with substantial voltage swings, enhancing design flexibility.
  • Consistent current gain (hFE): Offers typical gain values in the range of 40 to 300, ensuring predictable amplification performance in analog stages.
  • Robust power dissipation: Can dissipate up to 625mW, supporting steady operation without thermal failure under typical industrial conditions.

2N3740-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vce) 60 V
Collector-Base Voltage (Vcb) 60 V
Emitter-Base Voltage (Veb) 5 V
Collector Current (Ic) 200 mA
Power Dissipation (Ptot) 625 mW
DC Current Gain (hFE) 40 to 300 ??
Transition Frequency (fT) 80 MHz
Operating Temperature Range -65 to +200 ??C

2N3740-Transistor Advantages vs Typical Alternatives

This transistor delivers a balanced combination of medium power capability and voltage tolerance, outperforming many standard small-signal transistors in applications requiring higher load handling. Its wide gain range enhances circuit design flexibility and ensures stable amplification, while the silicon planar epitaxial construction offers improved reliability and thermal stability compared to older transistor types. These factors make it a preferred choice for industrial switching and analog signal processing tasks.

Typical Applications

  • Audio amplification circuits where moderate power gain and low distortion are required for signal fidelity.
  • Switching devices in control systems, offering reliable on/off current control for industrial automation.
  • General-purpose amplification in analog signal conditioning and sensor interface circuits.
  • Driver stages for relay and solenoid control requiring stable current gain and voltage handling.

2N3740-Transistor Brand Info

The 2N3740 transistor is a widely recognized component available from multiple semiconductor manufacturers known for their high-quality silicon devices. It is produced under rigorous quality controls to meet industry standards for performance and reliability. This transistor is often supplied in a standard TO-18 metal can package, facilitating excellent thermal dissipation and mechanical durability. Its consistent availability and proven track record make it a staple in electronic component inventories worldwide.

FAQ

What is the maximum collector current rating of this transistor?

The maximum collector current for this transistor is 200mA, which allows it to handle moderate load currents in various switching and amplification circuits without damage under specified operating conditions.

Can this transistor be used for high-frequency applications?

With a transition frequency of approximately 80MHz, this device is suitable for medium-frequency applications but may not be ideal for very high-frequency RF circuits requiring GHz-range operation.

What package type does this transistor come in?

This transistor typically comes in a TO-18 metal can package, which provides good thermal performance and mechanical robustness suitable for industrial environments.

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产品中间询盘

What is the typical DC current gain (hFE) range for this device?

The DC current gain ranges from 40 to 300, allowing designers to select devices suitable for their required amplification levels within analog or switching applications.

What operating temperature range is supported by this transistor?

The device can reliably operate across a wide temperature range from -65??C up to +200??C, enabling use in harsh industrial and environmental conditions.

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