2N3700UB-Transistor by ON Semiconductor – NPN Transistor, TO-92 Package

2N3700UB-Transistor Overview

The 2N3700UB transistor is a high-performance NPN bipolar junction transistor designed for general-purpose amplification and switching applications. It features a robust construction with a maximum collector current of 200mA and a collector-emitter voltage rating up to 40V, making it suitable for medium-power electronic circuits. Its low noise characteristics and reliable gain bandwidth product support precise signal amplification. This transistor is optimized for industrial environments, offering consistent performance and ease of integration into various analog and digital circuits. For detailed manufacturer information, visit IC Manufacturer.

2N3700UB-Transistor Key Features

• High Collector Current Capacity: Supports up to 200mA, enabling efficient switching and amplification in medium-power applications.
• Collector-Emitter Voltage Rating of 40V: Provides reliable operation in circuits requiring moderate voltage handling, ensuring device longevity.
• Low Noise Performance: Ideal for signal amplification where minimal distortion and interference are critical.
• Gain Bandwidth Product: Suitable for high-frequency operations, enhancing signal integrity in RF and audio applications.

2N3700UB-Transistor Technical Specifications

2N3700UB-Transistor Advantages vs Typical Alternatives

This transistor offers a balance of moderate voltage capability and high collector current, outperforming many typical small-signal transistors in power handling and gain bandwidth. Its low noise characteristics provide enhanced signal fidelity compared to general-purpose alternatives. Additionally, the robust operating temperature range ensures reliable operation across a variety of industrial environments, making it a versatile choice for engineers seeking dependable performance and integration ease.

Typical Applications

• Audio amplification circuits requiring low noise and stable gain for clear sound reproduction in consumer and industrial devices.
• Switching applications in power management systems where efficient current handling is essential.
• Signal processing stages in RF and communication equipment benefiting from high-frequency response.
• General-purpose amplification tasks in sensor interface circuits and control systems within industrial automation.

2N3700UB-Transistor Brand Info

The 2N3700UB transistor is manufactured by a reputable semiconductor supplier known for delivering reliable, high-quality discrete components for industrial applications. This product line focuses on providing transistors that meet stringent quality standards with consistent electrical performance. The 2N3700UB is engineered to support diverse electronic designs, ensuring compatibility and long-term stability across multiple use cases. Its availability and datasheet support facilitate seamless sourcing for engineering and procurement teams.

FAQ

What is the maximum collector current rating for the 2N3700UB transistor?

The maximum collector current for this transistor is rated at 200mA. This allows the device to handle moderate current loads effectively, suitable for many amplification and switching applications without risking damage or performance degradation.

Can the transistor operate in high-frequency circuits?

Yes, with a transition frequency (f_T) of approximately 100 MHz, this transistor is well-suited for high-frequency applications such as RF amplification and signal processing, delivering reliable gain and low noise.

What voltage levels can the 2N3700UB withstand?

The device can withstand a collector-emitter voltage of up to 40V and a collector-base voltage up to 60V, making it compatible with circuits operating within these voltage limits for safe and stable performance.

Is the transistor suitable for use in harsh temperature environments?

Yes, it supports an operating temperature range of -55??C to +150??C, enabling use in demanding industrial environments where temperature stability and robustness are critical.

How does the gain of the transistor vary?

The DC current gain (h_FE) ranges from 50 to 300, depending on operating conditions and bias. This wide gain range allows for flexible design choices in amplification stages to meet specific circuit requirements.