2N3700AUB/TR NPN Transistor by ON Semiconductor – TO-92 Package, High Gain Amplifier

  • This device operates as a transistor switch or amplifier, enabling efficient signal control in electronic circuits.
  • Featuring a specified voltage rating, it ensures stable performance under varying electrical loads for safety.
  • The compact LFCSP package offers board-space savings, facilitating integration into densely populated circuit designs.
  • Ideal for switching applications in power management, it enhances energy efficiency and system responsiveness.
  • Manufactured under quality standards, it provides reliable operation and consistent performance over time.
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产品上方询盘

2N3700AUB/TR Overview

The 2N3700AUB/TR is a high-performance NPN bipolar junction transistor (BJT) designed for medium-power amplification and switching applications. Featuring a robust gain bandwidth product and optimized switching speed, this component provides reliable operation in industrial and consumer electronics systems. Its compact SOT-23 surface-mount package supports efficient PCB integration while maintaining thermal stability. With proven electrical characteristics and consistent manufacturing quality, the 2N3700AUB/TR is ideal for engineers seeking dependable transistor solutions in amplifier circuits, digital switching, and signal processing. For detailed specifications and sourcing, visit IC Manufacturer.

2N3700AUB/TR Key Features

  • High current gain (hFE): Enables efficient amplification with minimal input current, reducing power consumption in signal amplification tasks.
  • Fast switching capability: Supports rapid switching frequencies, making it suitable for high-speed digital and pulse circuits.
  • Low collector-emitter saturation voltage (VCE(sat)): Minimizes power dissipation and improves efficiency in switching applications.
  • Compact SOT-23 package: Facilitates space-saving PCB layouts and simplifies automated assembly processes.

2N3700AUB/TR Technical Specifications

Parameter Value Units
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 200 mA
Power Dissipation (Ptot) 350 mW
Current Gain (hFE) 100 to 300
Transition Frequency (fT) 100 MHz
Package SOT-23

2N3700AUB/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of high current gain and fast switching speed compared to many standard BJTs. Its low saturation voltage reduces power losses, improving overall circuit efficiency. The SOT-23 package supports compact design and automated assembly, giving it a distinct advantage for space-constrained applications. Reliability under medium power dissipation and stable frequency response further enhance its suitability in industrial and consumer electronics versus typical transistor alternatives.

Typical Applications

  • Signal amplification in audio and RF circuits, where linear gain and low noise are critical for performance integrity.
  • Switching applications in digital logic circuits, enabling fast transitions with low power dissipation.
  • Driver stages for relays and small motors, leveraging its medium power handling capability.
  • General-purpose transistor use in electronic devices requiring stable operation under varying load conditions.

2N3700AUB/TR Brand Info

The 2N3700AUB/TR is a product manufactured under strict quality standards to ensure consistent performance in industrial-grade semiconductor devices. It is widely recognized for its robust electrical characteristics and compatibility with automated surface-mount technology processes. The product line is supported by comprehensive datasheets and application notes, enabling engineers to seamlessly integrate the transistor into diverse electronic designs. Its availability in tape-and-reel packaging further supports efficient high-volume manufacturing.

FAQ

What package type does the 2N3700AUB/TR use, and why is it important?

The transistor is housed in a SOT-23 surface-mount package, which is crucial for minimizing PCB space and enabling automated assembly. This compact footprint allows designers to develop smaller, more efficient electronic devices without compromising thermal management or electrical performance.

What is the maximum collector current rating for this transistor?

The maximum continuous collector current is 200 mA. This rating makes it suitable for moderate power applications, including signal amplification and low-power switching circuits where reliable current handling is essential.

How does the 2N3700AUB/TR??s gain compare across its specified range?

The current gain (hFE) ranges from 100 to 300, providing flexibility in circuit design. This ensures that the transistor can amplify input signals efficiently while accommodating variations in manufacturing tolerances and application requirements.

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产品中间询盘

Can this transistor operate at high frequencies?

Yes, with a transition frequency (fT) of approximately 100 MHz, it supports high-frequency operation. This characteristic is beneficial for RF amplification and fast-switching digital circuits where signal integrity at higher speeds is required.

Is the 2N3700AUB/TR suitable for automated manufacturing processes?

Absolutely. The device??s SOT-23 packaging and availability in tape-and-reel format make it ideal for automated pick-and-place assembly and soldering processes, facilitating efficient mass production with consistent quality.

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