2N3637-Transistor Overview
The 2N3637 is a silicon NPN bipolar junction transistor (BJT) designed for medium power amplification and switching applications. Offering a collector current capacity of up to 0.8A and a collector-emitter voltage rating of 30V, it serves reliably in analog and digital circuits. Its moderate gain bandwidth and robust construction make it suitable for general-purpose amplification tasks and switching operations in industrial and consumer electronics. Engineers and sourcing specialists will appreciate the device’s dependable performance parameters and compatibility with standard transistor circuits. For comprehensive sourcing and technical details, visit IC Manufacturer.
2N3637-Transistor Key Features
- Medium power handling: Supports collector currents up to 0.8A, enabling efficient control of moderate load currents in switching circuits.
- Voltage tolerance: Collector-emitter voltage rating of 30V ensures reliable operation in low to medium voltage environments.
- Gain characteristics: Provides a DC current gain (hFE) in a typical range, facilitating stable amplification with predictable linearity.
- Thermal stability: Designed for efficient heat dissipation, enhancing reliability under continuous operation.
2N3637-Transistor Technical Specifications
| Parameter | Symbol | Value | Unit |
|---|---|---|---|
| Collector-Emitter Voltage | Vceo | 30 | V |
| Collector-Base Voltage | Vcbo | 50 | V |
| Emitter-Base Voltage | Vebo | 5 | V |
| Collector Current (Continuous) | Ic | 0.8 | A |
| Power Dissipation | Pc | 0.625 | W |
| DC Current Gain (hFE) | hFE | 50 to 300 | (unitless) |
| Transition Frequency | fT | 30 | MHz |
| Operating Junction Temperature | Tj | 200 | ??C |
2N3637-Transistor Advantages vs Typical Alternatives
This transistor offers a balanced combination of moderate voltage and current ratings with a wide gain range, making it more versatile than many low-power BJTs. Its 30V collector-emitter voltage rating provides better voltage margin compared to lower voltage transistors, while its current handling of 0.8A ensures compatibility with a wide range of switching and amplification applications. Additionally, the reliable thermal characteristics enhance device longevity and stability under varying load conditions. These factors collectively make it a practical choice for engineers seeking dependable performance without the complexity or cost of high-power transistors.
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Typical Applications
- General-purpose amplifier circuits in audio and signal processing, where moderate current gain and voltage handling are required for stable operation.
- Switching regulators and power control circuits, benefiting from its ability to manage currents up to 0.8A reliably.
- Driver stages in industrial automation systems, providing robust voltage and current characteristics for controlling subsequent power devices.
- Low-to-medium power switching applications in consumer electronics, where efficient switching and heat dissipation are critical.
2N3637-Transistor Brand Info
The 2N3637 transistor is a widely recognized component offered by multiple semiconductor manufacturers adhering to JEDEC standard definitions. It is known for consistent quality and availability in various distribution channels, ensuring engineers can integrate it into designs with confidence. This product is part of a family of silicon BJTs designed for general-purpose amplification and switching, supporting reliable and cost-effective solutions in industrial and commercial electronics projects.
FAQ
What type of transistor is the 2N3637 and what are its basic characteristics?
The 2N3637 is an NPN bipolar junction transistor (BJT) designed for medium power applications. It features a collector-emitter voltage of 30V, can handle continuous collector current up to 0.8A, and offers a DC current gain typically ranging from 50 to 300.
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Can this transistor be used for switching applications?
Yes, the device??s current handling capability and voltage ratings make it suitable for switching applications in low-to-medium power circuits, including driver stages and power control modules.
What is the maximum operating temperature for the 2N3637?
The transistor can operate safely up to a junction temperature of 200??C, providing good thermal stability for demanding environments.
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How does the 2N3637 compare to low-power transistors in terms of voltage and current ratings?
Compared to low-power transistors, it supports higher collector-emitter voltages and currents, offering a broader operational range and better suitability for medium power tasks without significantly increased complexity or cost.
Is the 2N3637 commonly available from multiple manufacturers?
Yes, it is a standard JEDEC part number, widely produced and stocked by various semiconductor manufacturers and distributors, ensuring availability and interchangeability in supply chains.
