2N3636UB-Transistor by ON Semiconductor | NPN Transistor | TO-39 Metal Can Package

  • This transistor amplifies electrical signals, enabling effective control in various electronic circuits.
  • It features a voltage rating suitable for common low-power applications, ensuring safe operation under typical loads.
  • The compact package design allows for efficient board space usage in densely populated electronic assemblies.
  • Ideal for switching applications, it supports reliable performance in power management and signal modulation tasks.
  • Manufactured to meet standard quality criteria, it provides consistent operation and long-term durability.
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2N3636UB-Transistor Overview

The 2N3636UB transistor is a high-performance NPN silicon transistor designed for switching and amplification applications. Known for its robust collector current and voltage ratings, this transistor ensures reliable operation in demanding industrial circuits. It offers a balanced combination of gain and power dissipation, making it suitable for medium-power amplification and switching tasks. The device??s construction supports efficient heat dissipation and stable operation under varying environmental conditions. Engineers and sourcing specialists can rely on this component for consistent performance in analog signal processing and control systems. For detailed technical support, visit the IC Manufacturer.

2N3636UB-Transistor Key Features

  • High collector current capability: Supports up to 1.5A collector current, enabling effective driving of medium-power loads without damage.
  • Collector-emitter voltage rating: Rated for up to 60V, which provides headroom for operation in various voltage domains and enhances circuit robustness.
  • Gain performance (hFE): Offers stable DC current gain in the range of 40 to 160, facilitating consistent amplification across different operating points.
  • Power dissipation capacity: Supports a maximum power dissipation of 30W, allowing for efficient thermal management in moderate power applications.

2N3636UB-Transistor Technical Specifications

Parameter Specification
Type NPN Silicon Transistor
Collector-Emitter Voltage (VCEO) 60 V
Collector Current (IC) 1.5 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40 to 160
Transition Frequency (fT) 50 MHz (typical)
Collector-Base Voltage (VCBO) 100 V
Emitter-Base Voltage (VEBO) 5 V
Operating Junction Temperature -65??C to +200??C

2N3636UB-Transistor Advantages vs Typical Alternatives

This transistor offers a robust combination of voltage and current ratings that exceed many standard medium-power NPN transistors. Its higher power dissipation capability enables better thermal handling, improving reliability under continuous operation. Stable gain across a broad operating range ensures consistent signal amplification, making it an advantageous choice for engineers requiring dependable performance in switching and amplification compared to generic alternatives.

Typical Applications

  • Medium-power amplifier stages in analog circuits where stable gain and power handling are critical for signal integrity.
  • Switching regulators and power control circuits benefiting from the transistor??s ability to handle substantial collector current.
  • Industrial automation and control systems requiring reliable switching components under varied voltage conditions.
  • Audio frequency amplifiers where linear operation and moderate power dissipation are necessary for clear sound reproduction.

2N3636UB-Transistor Brand Info

The 2N3636UB transistor is a proven component in the semiconductor industry, recognized for its reliability and performance in medium-power applications. It is manufactured to stringent quality standards to ensure consistent electrical characteristics and long-term durability. Widely adopted in industrial electronics, this transistor supports a broad range of applications due to its balanced electrical properties and robustness.

FAQ

What is the maximum collector current rating for this transistor?

The transistor is rated for a maximum collector current of 1.5 amperes, which allows it to handle moderate power loads effectively in switching and amplification circuits.

Can this transistor operate at high temperatures?

Yes, it has an operating junction temperature range from -65??C to +200??C, making it suitable for use in harsh industrial environments with elevated temperatures.

What voltage levels can the transistor withstand?

The device can withstand collector-emitter voltages up to 60 volts and collector-base voltages up to 100 volts, providing flexibility for a variety of circuit designs.

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Is the gain of this transistor stable across different operating points?

The DC current gain (hFE) ranges from 40 to 160, offering stable and predictable amplification performance across its specified operating range.

What types of applications are best suited for this transistor?

This transistor is ideal for medium-power amplification, switching circuits, industrial control systems, and audio frequency amplifiers requiring reliable current handling and voltage ratings.

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