2N3636-Transistor by ON Semiconductor – NPN Amplifier Transistor, TO-18 Package

2N3636-Transistor Overview

The 2N3636 is a silicon NPN bipolar junction transistor designed for medium-power amplification and switching applications. It offers reliable performance with a maximum collector current of 1 ampere and a collector-emitter voltage rating up to 60 volts. This transistor is well-suited for general-purpose amplifier circuits, driver stages, and low- to medium-frequency switching tasks. Its robust design ensures dependable operation under moderate power conditions, making it a versatile choice for industrial and commercial electronic systems. For sourcing and detailed technical support, refer to IC Manufacturer.

2N3636-Transistor Key Features

• Medium power handling: Supports collector currents up to 1A, enabling effective switching and amplification in moderate power circuits.
• High voltage tolerance: Collector-emitter voltage rating of 60V protects against voltage spikes, enhancing circuit reliability.
• Suitable gain characteristics: Current gain (hFE) range ensures stable amplification performance in various analog applications.
• Durable construction: Designed with a TO-39 metal can package that offers enhanced thermal dissipation and mechanical robustness.

2N3636-Transistor Technical Specifications

2N3636-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of voltage handling and current capacity that exceeds many low-power alternatives. Its robust TO-39 casing ensures superior thermal management compared to plastic packages, enhancing reliability in demanding environments. The wide current gain range supports flexible circuit design, while the 60V collector-emitter rating allows safer operation in higher voltage applications. These factors make it a dependable and precise choice for engineers prioritizing durability and performance in medium-power amplification and switching roles.

Typical Applications

• General-purpose amplifier stages in audio and signal processing circuits, benefiting from stable gain and moderate power handling.
• Driver circuits for relay and solenoid control requiring reliable switching at currents up to 1A.
• Switching components in industrial control systems where voltage tolerance and robustness are critical.
• Low to medium frequency oscillator circuits used in instrumentation and communication devices.

2N3636-Transistor Brand Info

The 2N3636 transistor is a widely recognized and established device in the semiconductor industry, manufactured under strict quality controls to meet industrial standards. It is typically supplied in a TO-39 metal can package, known for its mechanical strength and thermal efficiency. This transistor is favored in applications demanding consistent performance and reliability. The product is supported by detailed datasheets and technical resources from trusted IC manufacturers, ensuring engineers and sourcing specialists can integrate it confidently into their industrial designs.

FAQ

What is the maximum collector current for the 2N3636 transistor?

The maximum collector current rating for this transistor is 1 ampere. This allows it to handle medium power applications such as switching and amplification without risk of damage under specified operating conditions.

What package type does the 2N3636 use and why is it important?

The transistor comes in a TO-39 metal can package, which provides excellent thermal dissipation and mechanical durability. This is particularly important for maintaining performance stability in industrial environments where heat and mechanical stress may be factors.

Can the 2N3636 transistor be used for high-frequency applications?

While it has a transition frequency (fT) of approximately 70 MHz, it is more suited for low to medium frequency applications rather than very high-frequency circuits. Designers should consider this specification when selecting transistors for RF or fast switching purposes.

What voltage limits should be observed when using this transistor?

The maximum collector-emitter voltage is 60 volts, and the collector-base voltage is rated at 80 volts. Exceeding these voltage limits can cause breakdown or permanent damage, so designs should ensure operation within these parameters.

How does the current gain (hFE) of the 2N3636 affect circuit design?

The current gain ranges from 40 to 300, allowing flexibility in amplification levels. Circuit designers can leverage this to achieve desired signal amplification while maintaining linearity and stability within the transistor??s operating range.