2N3635UB-Transistor by ON Semiconductor – NPN Transistor, TO-92 Package

2N3635UB-Transistor Overview

The 2N3635UB is a robust NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. With a maximum collector current rating of 1.5 A and a collector-emitter voltage of 60 V, it delivers reliable performance in medium power circuits. Its complementary characteristics include a high DC current gain (hFE) that ranges from 40 to 200, ensuring efficient signal amplification. This transistor is housed in a TO-18 metal can package, offering excellent thermal conductivity and durability for industrial environments. Sourcing this component from a trusted IC Manufacturer ensures compliance with stringent quality standards.

2N3635UB-Transistor Key Features

• High Collector Current Capacity: Supports up to 1.5 A, enabling reliable operation in moderate power amplification and switching circuits.
• Voltage Endurance: Collector-emitter voltage rating of 60 V provides headroom for various industrial and control system applications.
• Wide DC Current Gain Range: hFE between 40 and 200 allows flexible biasing for precision amplification needs.
• Low Saturation Voltage: Ensures efficient switching with minimal power dissipation, improving overall circuit efficiency.

2N3635UB-Transistor Technical Specifications

2N3635UB-Transistor Advantages vs Typical Alternatives

The 2N3635UB transistor stands out for its balance of moderate power handling and high current gain, offering superior sensitivity and amplification accuracy compared to typical alternatives. Its robust voltage ratings and low saturation voltage contribute to enhanced reliability and efficiency in industrial switching and amplification tasks. Additionally, the TO-18 package ensures better heat dissipation and mechanical stability, making it a preferred choice for rugged environments.

Typical Applications

• General-purpose amplification circuits in industrial control systems requiring stable gain and moderate current handling capabilities.
• Switching devices in medium power loads where efficiency and fast switching times are essential.
• Signal processing stages in measurement and instrumentation equipment, benefiting from its wide gain range.
• Driver stages for relays and solenoids, leveraging its reliable voltage and current ratings.

2N3635UB-Transistor Brand Info

The 2N3635UB transistor is a precision-engineered product designed to meet stringent industrial standards. Manufactured using proven semiconductor processes, it combines durability with consistent electrical performance. This product is widely recognized for its reliability in critical applications, backed by comprehensive quality control protocols. Engineers and sourcing specialists trust this transistor for its proven track record and availability through established supply chains.

FAQ

What type of transistor is the 2N3635UB and what are its primary characteristics?

The 2N3635UB is an NPN bipolar junction transistor known for its moderate power handling, high current gain, and robust voltage ratings. It is typically used in amplification and switching applications requiring reliable performance up to 1.5 A collector current and 60 V collector-emitter voltage.

What package type does this transistor come in and why is it important?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and physical durability. This packaging ensures stable operation under industrial conditions and efficient heat dissipation during continuous use.

Can this transistor be used for high-frequency applications?

With a transition frequency (fT) of approximately 50 MHz, it is suitable for low to medium frequency applications but may not be ideal for very high-frequency RF circuits. It performs well in typical industrial control and amplification roles.

What are the typical power dissipation limits for this transistor?

The maximum power dissipation is rated at 1.0 W under standard operating conditions. Proper heat sinking or cooling should be used to maintain device reliability and prevent thermal runaway in continuous or high-load scenarios.

How does the current gain (hFE) range affect practical circuit design?

The DC current gain range of 40 to 200 allows flexibility in biasing and amplification levels, enabling designers to tailor performance to specific circuit requirements. This broad gain range supports varied applications from switching to linear amplification.