2N3634UB-Transistor by ON Semiconductor ?C NPN Transistor, TO-18 Metal Can Package

  • This transistor amplifies electrical signals, enabling efficient control in electronic circuits.
  • Its voltage rating supports stable operation under moderate power conditions, ensuring consistent performance.
  • The compact package type allows for board-space savings in densely packed circuit designs.
  • Ideal for switching applications where quick response enhances overall system efficiency.
  • Constructed to maintain reliability under typical operating environments, promoting long-term device stability.
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产品上方询盘

2N3634UB-Transistor Overview

The 2N3634UB transistor is a high-performance bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Engineered to deliver reliable operation with consistent gain and low noise, this NPN transistor is suitable for a wide range of industrial and electronic devices. It offers robust electrical characteristics, including a maximum collector current and voltage ratings that make it compatible with moderate power circuits. The device??s construction supports efficient thermal dissipation and stable operation under varying load conditions. For procurement and detailed technical support, visit the IC Manufacturer website.

2N3634UB-Transistor Key Features

  • High Collector Current Capacity: Supports continuous collector currents suitable for moderate power amplification, enabling effective switching and signal processing.
  • Wide Voltage Handling: Offers a collector-emitter voltage rating that accommodates a broad range of circuit voltages, enhancing design flexibility.
  • Low Noise Performance: Reduces signal distortion in amplification stages, critical for maintaining signal integrity in sensitive electronic circuits.
  • Thermal Stability: Designed for efficient heat dissipation, ensuring reliable operation under thermal stress and extending device lifetime.

2N3634UB-Transistor Technical Specifications

Parameter Specification
Transistor Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (Vceo) 40 V (maximum)
Collector Current (Ic) 800 mA (maximum continuous)
Power Dissipation (Pd) 625 mW
DC Current Gain (hFE) 30 to 300 (varies by operating conditions)
Transition Frequency (fT) 100 MHz (typical)
Base-Emitter Voltage (Vbe) 1.2 V (typical at Ic=10 mA)
Operating Junction Temperature -65??C to +150??C

2N3634UB-Transistor Advantages vs Typical Alternatives

This transistor provides a balanced combination of moderate power handling and high-frequency response, outperforming many standard BJTs in similar voltage and current classes. Its low noise characteristics and stable gain make it advantageous for precision amplification tasks. Additionally, the device??s robust thermal rating ensures reliable operation in demanding industrial environments, contributing to fewer failures and lower maintenance costs compared to typical alternatives.

Typical Applications

  • Signal amplification in audio and RF circuits where low noise and reliable gain are essential for accurate sound and signal reproduction.
  • Switching applications in industrial control systems requiring dependable transistor operation under variable loads.
  • Driver stages for relay and solenoid control, utilizing the transistor??s current handling capacity and fast switching characteristics.
  • General-purpose electronic circuits in instrumentation and communication devices benefiting from the transistor??s thermal stability and performance consistency.

2N3634UB-Transistor Brand Info

This transistor is manufactured and distributed by a leading IC Manufacturer known for high-quality semiconductor products tailored to industrial and commercial electronics markets. The product line is supported by comprehensive datasheets and application notes, ensuring seamless integration into complex designs. The 2N3634UB is part of a family of transistors designed to meet stringent reliability standards, backed by rigorous quality control processes.

FAQ

What is the maximum collector current rating for this transistor?

The maximum continuous collector current for this transistor is 800 mA. This rating ensures it can handle moderate power loads in amplification and switching applications without compromising performance or reliability.

Can this transistor be used in high-frequency circuits?

Yes, with a typical transition frequency (fT) of around 100 MHz, this transistor is suitable for high-frequency signal amplification and switching tasks commonly found in RF and communication circuits.

What are the thermal operating limits of the transistor?

The device can operate reliably within a junction temperature range of -65??C to +150??C, allowing it to perform in harsh environmental conditions without degradation of electrical characteristics.

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产品中间询盘

How does the transistor??s low noise feature benefit circuit design?

Low noise performance minimizes unwanted signal distortion and interference, which is critical in audio and RF amplification applications where signal clarity and accuracy are paramount.

Is this transistor compatible with standard NPN transistor circuit designs?

Yes, it is a standard NPN BJT with typical pin configuration and electrical characteristics, making it compatible with conventional NPN transistor circuits for general-purpose amplification and switching.

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