2N3634L-Transistor by ON Semiconductor – NPN Transistor, TO-18 Metal Can Package

2N3634L-Transistor Overview

The 2N3634L is a high-performance bipolar junction transistor designed for medium-power switching and amplification applications. Featuring robust electrical characteristics, it offers reliable operation within a wide range of industrial environments. This transistor delivers effective current gain and stable operation at elevated voltages, making it suitable for use in signal processing and power control circuits. Its construction supports efficient thermal dissipation, ensuring longevity and consistent performance. Designed with engineers and sourcing specialists in mind, the 2N3634L provides a dependable solution for demanding electronic designs. For further reference, visit the IC Manufacturer.

2N3634L-Transistor Key Features

• High Current Gain: Ensures efficient amplification and switching, improving overall circuit sensitivity and response.
• Medium Power Handling: Supports power dissipation up to 1 watt, suitable for a variety of control and driver stages.
• Wide Voltage Range: Operates reliably up to a collector-emitter voltage of 80 V, offering versatility for diverse applications.
• Thermal Stability: Designed to maintain performance under elevated junction temperatures, enhancing reliability in industrial settings.

2N3634L-Transistor Technical Specifications

2N3634L-Transistor Advantages vs Typical Alternatives

This transistor stands out for its balance of high voltage tolerance and medium power capabilities, making it more reliable in harsh environments compared to typical low-power transistors. The wide operating temperature range and stable current gain improve circuit accuracy and robustness. These features enable seamless integration into industrial control systems where precision and durability are critical, offering a clear advantage over less rugged alternatives.

Typical Applications

• Medium-power switching circuits in industrial automation, providing reliable control signals with efficient gain characteristics.
• Audio amplification stages requiring stable performance and low distortion at moderate power levels.
• Voltage regulation circuits where consistent transistor operation across temperature variations is necessary.
• General purpose amplification and switching tasks in consumer and industrial electronic devices.

2N3634L-Transistor Brand Info

The 2N3634L transistor is a well-established component recognized for its quality and reliability in semiconductor markets. Manufactured under stringent quality controls, this product adheres to industry standards for performance and durability. Its reputation is supported by consistent supply and support from established semiconductor manufacturers, ensuring availability for engineers and sourcing professionals requiring trustworthy components for their projects.

FAQ

What is the maximum collector current rating for this transistor?

The device can handle a continuous collector current up to 1 ampere, making it suitable for moderate power applications such as switching and amplification in industrial circuits.

Can this transistor operate at high temperatures?

Yes, it is rated for operation at junction temperatures ranging from -65??C up to +200??C, which allows it to function reliably in demanding thermal environments often found in industrial electronics.

What voltage limits should be observed to avoid damage?

The maximum collector-emitter voltage is 80 volts, while the collector-base voltage can reach up to 100 volts. Exceeding these limits risks permanent damage to the transistor.

Is this transistor suitable for high-frequency applications?

With a transition frequency around 30 MHz, it is adequate for moderate frequency applications, such as audio amplification and control signal switching, but not optimized for very high-frequency RF circuits.

How does the current gain vary across conditions?

The DC current gain (hFE) typically ranges from 40 to 200 depending on the specific operating conditions and test parameters, providing flexibility in circuit design for various amplification needs.