2N3585P-Transistor-PIND NPN Amplifier Transistor – 2N3585P Brand, TO-39 Package

  • This transistor amplifies electrical signals, enabling improved performance in switching and amplification circuits.
  • Its electrical characteristics support stable operation, ensuring consistent signal handling under varying conditions.
  • The compact package design offers efficient board space usage, suitable for dense electronic assemblies.
  • Ideal for use in audio signal processing, it enhances sound clarity by providing reliable amplification.
  • Manufactured to meet standard reliability criteria, it ensures long-term durability in electronic applications.
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2N3585P-Transistor-PIND Overview

The 2N3585P-Transistor-PIND is a high-performance PNP bipolar junction transistor designed for switching and amplification tasks in industrial electronics. Built with robust construction and optimized for reliable operation, this transistor supports a maximum collector current of 0.7 A and a collector-emitter voltage rating up to 40 V. Its complementary electrical characteristics make it ideal for use in amplifier circuits, signal processing, and other control applications requiring stable gain and efficient current handling. Engineers and sourcing specialists will appreciate its compact TO-18 metal can package, which ensures durability and effective thermal management. For detailed component sourcing and specifications, visit IC Manufacturer.

2N3585P-Transistor-PIND Key Features

  • High Collector Current Capability: Supports up to 0.7 A, enabling effective switching and amplification in medium power applications.
  • Moderate Voltage Rating: Collector-emitter voltage of 40 V allows operation within a wide range of industrial voltage levels.
  • Consistent Gain Performance: Forward current gain (hFE) ranges from 40 to 320, ensuring predictable amplification behavior.
  • Robust TO-18 Package: Metal can enclosure enhances thermal dissipation and mechanical stability for long-term reliability.

2N3585P-Transistor-PIND Technical Specifications

Parameter Value Unit
Transistor Type PNP Bipolar Junction
Collector-Emitter Voltage (VCEO) 40 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 0.7 A
Power Dissipation (Ptot) 0.8 W
DC Current Gain (hFE) 40 to 320
Transition Frequency (fT) 75 MHz
Package Type TO-18 Metal Can

2N3585P-Transistor-PIND Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage tolerance and collector current capacity that often surpasses typical small-signal alternatives. Its moderate gain range provides reliable amplification without excessive noise, while the TO-18 metal package ensures enhanced thermal stability compared to plastic-encapsulated transistors. These factors contribute to improved longevity and consistent performance in industrial and control system environments.

Typical Applications

  • Signal amplification in audio and instrumentation circuits where linearity and gain stability are critical for accurate signal processing.
  • Switching elements in low to medium power control circuits requiring dependable switching characteristics and moderate current handling.
  • Interface stages for sensor inputs, converting low-level signals for further processing or digital conversion.
  • General-purpose amplification and switching in industrial automation equipment, benefiting from robust mechanical and thermal properties.

2N3585P-Transistor-PIND Brand Info

The 2N3585P-Transistor-PIND is a classic semiconductor device widely adopted in industrial electronics, manufactured under stringent quality standards to meet demanding operational requirements. The product comes from a trusted line of bipolar transistors known for consistent electrical characteristics and reliability. Its legacy and proven performance make it a preferred choice for engineers designing durable and efficient analog and digital electronics.

FAQ

What is the maximum voltage rating of this transistor?

The maximum collector-emitter voltage (VCEO) rating is 40 V. This ensures the transistor can safely operate in circuits with supply voltages up to this level without breakdown.

Can this transistor handle high power dissipation?

The device supports a total power dissipation of 0.8 W, which is suitable for moderate power applications. Adequate heat sinking or thermal management is recommended to maintain reliable operation.

What is the typical gain range for this transistor?

The forward current gain (hFE) ranges from 40 to 320, allowing for flexible use in amplification circuits where moderate to high gain is necessary without compromising signal integrity.

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产品中间询盘

How does the TO-18 package benefit industrial applications?

The TO-18 metal can package provides superior thermal conductivity and mechanical protection, enhancing reliability in harsh industrial environments where temperature fluctuations and mechanical stress are common.

Is this transistor suitable for switching applications?

Yes, the transistor??s maximum collector current of 0.7 A and switching speed with a transition frequency of 75 MHz make it suitable for various switching tasks in control and automation circuits.

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