2N3507U4-Transistor PNP Bipolar Junction Transistor in TO-92 Package by ON Semiconductor

  • This transistor amplifies current, enabling efficient signal control in various electronic circuits.
  • Its specified voltage rating ensures stable operation under typical electrical stress conditions.
  • The compact package supports easy integration and saves valuable circuit board space.
  • Ideal for switching applications, it helps manage power flow effectively in embedded systems.
  • Manufactured under stringent quality controls to deliver consistent and reliable performance over time.
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2N3507U4-Transistor Overview

The 2N3507U4 is a high-performance PNP silicon transistor designed for medium-power amplification and switching applications. Offering reliable operation with a maximum collector current of 3A and a collector-emitter voltage rating of 60V, it is well-suited for industrial electronics and control circuits. This transistor delivers stable gain and robust thermal characteristics, making it ideal for use in power amplifiers, audio equipment, and general-purpose switching tasks. Engineers and sourcing specialists can rely on the 2N3507U4 for consistent performance in demanding environments. For detailed datasheets and procurement, visit IC Manufacturer.

2N3507U4-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (Vceo) 60 V
Collector-Base Voltage (Vcbo) 60 V
Emitter-Base Voltage (Vebo) 5 V
Collector Current (Ic) 3 A
Power Dissipation (Pc) 30 W
DC Current Gain (hFE) 20 to 70 (typical)
Transition Frequency (fT) 3 MHz
Junction Temperature (Tj) 200 ??C

2N3507U4-Transistor Key Features

  • High Collector Current Capacity: Supports up to 3A, enabling efficient handling of medium power loads without compromising performance.
  • Robust Voltage Ratings: With a collector-emitter voltage of 60V, it accommodates a wide range of circuit designs requiring moderate voltage handling.
  • Reliable Thermal Performance: Rated for junction temperatures up to 200??C, ensuring stability in high-temperature industrial environments.
  • Wide DC Gain Range: Provides a current gain (hFE) between 20 and 70, suitable for various amplification needs with predictable linearity.

Typical Applications

  • Medium-power amplifiers in audio and industrial control systems, where consistent gain and thermal reliability are critical for performance and longevity.
  • General-purpose switching applications in power management circuits requiring dependable operation at currents up to 3A.
  • Signal amplification stages in consumer electronics and instrumentation, leveraging the transistor??s predictable gain characteristics.
  • Driver stages for relay and solenoid control circuits, benefiting from the high current and voltage ratings.

2N3507U4-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage handling and high current capacity, making it a versatile solution compared to alternatives with lower ratings. Its reliable thermal endurance and wide gain range provide engineers with a stable device that performs well under varying electrical and environmental stresses. These attributes ensure enhanced reliability and efficiency in industrial and power amplification applications.

2N3507U4-Transistor Brand Info

The 2N3507U4 is a standard PNP transistor originally popularized by well-established semiconductor manufacturers such as ON Semiconductor and Fairchild. It is widely recognized for its robustness and availability across multiple global suppliers. This transistor??s design follows JEDEC standard outlines, ensuring compatibility and interchangeability with similar transistor types. Its proven track record in industrial and consumer electronics makes it a trusted component for engineers and sourcing specialists worldwide.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current is rated at 3 amperes, allowing the transistor to handle medium-power loads in various switching and amplification applications reliably.

Can this transistor operate at high temperatures?

Yes, the 2N3507U4 is capable of operating with a junction temperature up to 200??C, making it suitable for demanding industrial environments where thermal stability is critical.

What is the typical current gain (hFE) range for this device?

The DC current gain typically ranges from 20 to 70, which provides flexibility for amplification stages requiring moderate gain with predictable performance.

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Is this transistor suitable for audio amplifier applications?

Yes

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