2N3507-Transistor Overview
The 2N3507 is a PNP bipolar junction transistor (BJT) designed for medium power and low to moderate frequency switching and amplification applications. With a maximum collector current rating of 1A and a collector-emitter voltage of 60V, it offers reliable performance in general-purpose circuits. Its silicon construction ensures stable operation across a wide range of temperatures, making it suitable for industrial and consumer electronics. The transistor’s complementary nature and robust gain characteristics support efficient signal amplification and switching tasks. For detailed technical data and sourcing, visit IC Manufacturer.
2N3507-Transistor Technical Specifications
| Parameter | Specification |
|---|---|
| Type | PNP Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector-Base Voltage (VCBO) | 60 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Collector Current (IC) | 1 A |
| Power Dissipation (Ptot) | 800 mW |
| DC Current Gain (hFE) | 40 to 100 (varies with collector current) |
| Transition Frequency (fT) | 3 MHz (typical) |
| Package | TO-18 Metal Can |
2N3507-Transistor Key Features
- Medium power handling: Supports collector currents up to 1A, enabling its use in moderate power switching and amplification circuits.
- High voltage tolerance: With a collector-emitter voltage rating of 60V, it accommodates a wide range of circuit voltages without breakdown risk.
- Stable gain characteristics: Offers a DC current gain ranging from 40 to 100, ensuring consistent amplification performance across operating conditions.
- Low noise operation: Silicon construction and design optimize low-noise performance, beneficial in audio and signal processing applications.
- Durable TO-18 packaging: The metal can package provides excellent thermal conductivity and mechanical robustness for industrial reliability.
Typical Applications
- General-purpose switching circuits where moderate current and voltage handling are required, such as relay drivers and interface stages.
- Audio preamplifier stages benefitting from low noise and stable gain characteristics for clear signal amplification.
- Complementary amplifier configurations paired with NPN transistors for push-pull output stages in linear amplifiers.
- Industrial control circuits requiring reliable and rugged transistor components for signal switching under varying environmental conditions.
2N3507-Transistor Advantages vs Typical Alternatives
This transistor offers reliable medium power handling with a robust voltage rating, making it advantageous over lower voltage or current-rated alternatives. Its stable current gain and low noise operation enhance signal integrity, especially in amplification applications. The durable TO-18 metal can package provides improved thermal performance and mechanical stability versus plastic encapsulated devices, supporting long-term industrial use.
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2N3507-Transistor Brand Info
The 2N3507 is a widely recognized transistor originally introduced and popularized by manufacturers such as Motorola and ON Semiconductor. Over time, it has been produced by multiple semiconductor suppliers adhering to JEDEC standardization, ensuring cross-compatibility. Known for its dependable performance in analog and switching circuits, this transistor remains a favored choice in industrial and educational applications. Its legacy and availability from reputable manufacturers highlight its enduring relevance in electronic design.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current for this PNP transistor is 1 ampere. This makes it suitable for moderate power applications, including switching and amplification where current demands do not exceed this threshold.
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Can this transistor be used for high-frequency applications?
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