2N3506AL-Transistor Overview
The 2N3506AL transistor is a high-voltage, PNP silicon planar transistor designed for medium power amplification and switching applications. It offers reliable performance with a collector-emitter voltage rating suitable for demanding industrial environments. With a complementary NPN counterpart in similar series, this device is well-suited for audio amplifiers, power regulators, and switching circuits. Its robust construction ensures stable operation under various load conditions, making it a preferred choice among engineers seeking durability and consistent electrical characteristics. For detailed sourcing and more technical details, visit IC Manufacturer.
2N3506AL-Transistor Key Features
- High voltage rating: Enables operation up to 60V collector-emitter voltage, ensuring suitability for medium power industrial circuits.
- Medium power capability: Supports collector current up to 2A, ideal for amplification and switching tasks requiring moderate current handling.
- Complementary design: Matches with NPN transistors for push-pull amplifier configurations, improving circuit symmetry and efficiency.
- Planar silicon construction: Provides enhanced reliability and stable electrical parameters over temperature variations.
2N3506AL-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 60 | V |
| Collector-Base Voltage (VCBO) | 80 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 2 | A |
| Power Dissipation (Ptot) | 12.5 | W |
| DC Current Gain (hFE) | 40 to 160 | – |
| Transition Frequency (fT) | 3 | MHz |
| Package Type | TO-18 Metal Can | – |
2N3506AL-Transistor Advantages vs Typical Alternatives
This transistor offers a favorable combination of high voltage and medium current ratings, making it more versatile than many low-power transistors. Its planar silicon construction ensures improved reliability and thermal stability compared to older junction transistor designs. The wide DC gain range supports flexible amplification needs, while the metal TO-18 package provides robust mechanical and thermal performance, outperforming plastic encapsulated alternatives in demanding industrial settings.
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Typical Applications
- Audio power amplifiers: Ideal for use in push-pull stages where medium power and voltage handling are critical, delivering clear signal amplification with reliability.
- Voltage regulator circuits: Suitable for controlling voltage levels in power supplies, ensuring stable output under varying load conditions.
- Switching applications: Can be used effectively in relay drivers and other switching tasks requiring moderate current and voltage ratings.
- General-purpose amplification: Well-suited for signal amplification in industrial control and instrumentation systems.
2N3506AL-Transistor Brand Info
The 2N3506AL transistor is offered by various semiconductor manufacturers known for producing reliable discrete components. This device is recognized for its consistent performance and adherence to industry standards, making it a trusted choice for engineers in industrial electronics and power management. Its availability through multiple suppliers ensures easy sourcing and integration into design workflows.
FAQ
What is the maximum collector current rating for the 2N3506AL transistor?
The maximum collector current for this transistor is 2 amperes. This rating allows it to handle moderate power levels suitable for amplification and switching applications in industrial circuits.
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Can the 2N3506AL be used in high-frequency applications?
This transistor has a transition frequency of approximately 3 MHz, which makes it suitable for low to medium frequency applications but not ideal for very high-frequency RF circuits.
What type of package does the 2N3506AL come in?
The device is housed in a TO-18 metal can package, which offers enhanced thermal dissipation and mechanical robustness compared to plastic packages.
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Is the 2N3506AL suitable for complementary amplifier designs?
Yes, it is a PNP transistor often paired with complementary NPN transistors from the same family to create push-pull amplifier stages with balanced performance.
What are the voltage limits for safe operation of this transistor?
The maximum collector-emitter voltage is 60V, collector-base voltage is 80V, and emitter-base voltage is 5V. Staying within these limits ensures reliable and safe operation.
