2N3501E3-Transistor-RoHS NPN Transistor 2N3501E3 by ON Semiconductor, TO-92 Package

2N3501E3-Transistor-RoHS Overview

The 2N3501E3 is a PNP bipolar junction transistor designed for medium power amplification and switching applications. RoHS compliant, this transistor offers reliable performance in industrial and consumer electronics where environmental standards are critical. Its robust electrical characteristics include a maximum collector-emitter voltage of 60V and a collector current rating up to 800mA, making it suitable for moderate load conditions. The device is optimized for linear amplifier circuits and general purpose switching tasks, providing stable gain and efficient operation. Sourced from IC Manufacturer, it ensures consistent quality and traceability for engineering and procurement teams focused on dependable semiconductor solutions.

2N3501E3-Transistor-RoHS Key Features

• Medium power handling capability: Supports collector currents up to 800mA, enabling efficient switching and amplification in mid-range power applications.
• High voltage tolerance: Maximum collector-emitter voltage of 60V ensures safe operation in circuits with moderate voltage levels.
• RoHS compliance: Environmentally friendly design meets regulatory requirements, reducing hazardous substances and supporting sustainable manufacturing.
• Stable DC current gain (hFE): Typical gain range ensures predictable amplification characteristics, facilitating circuit design and performance optimization.

2N3501E3-Transistor-RoHS Technical Specifications

2N3501E3-Transistor-RoHS Advantages vs Typical Alternatives

This transistor offers a balanced combination of voltage rating and current capacity, making it well-suited for applications that require stable switching and amplification without excessive power dissipation. Compared to other general-purpose transistors, its RoHS compliance ensures environmentally responsible production. Its moderate gain and frequency response provide versatility beyond basic switching, delivering enhanced reliability and integration ease in industrial circuits.

Typical Applications

• Signal amplification in analog circuits, where moderate power handling and stable gain are necessary for clear, distortion-free output.
• Switching circuits for industrial control systems requiring reliable transistor operation under varying loads.
• Driver stages in audio amplifiers and small motor control circuits benefiting from mid-level current capacity.
• General-purpose electronic devices where environmental compliance and consistent performance are mandatory.

2N3501E3-Transistor-RoHS Brand Info

This transistor is part of the 2N3501E3 series offered by IC Manufacturer, known for producing semiconductor components that meet strict quality and environmental standards. The product line emphasizes reliability, performance consistency, and compliance with industry regulations such as RoHS. Engineers and sourcing specialists recognize this brand for offering durable transistors suited for industrial and commercial electronic applications worldwide.

FAQ

What is the maximum collector current rating for this transistor?

The device supports a maximum continuous collector current of 800mA, making it suitable for medium power applications such as signal amplification and switching circuits.

Is this transistor RoHS compliant?

Yes, the transistor meets RoHS (Restriction of Hazardous Substances) standards, ensuring it contains no hazardous materials above regulatory limits, supporting eco-friendly manufacturing and use.

What package type does this transistor come in?

The transistor is housed in a TO-92 package, a popular through-hole format that facilitates easy mounting and heat dissipation in various electronic circuits.

What is the typical gain range (hFE) for this transistor?

The DC current gain (hFE) typically ranges between 40 and 200, depending on the collector current, which enables flexible design options for different amplification requirements.

Can this transistor be used in high-frequency applications?

With a typical transition frequency (fT) of approximately 50MHz, this transistor is suitable for moderate frequency applications but may not be ideal for very high-frequency RF circuits.