2N3499UB/TR Overview
The 2N3499UB/TR is a high-performance NPN bipolar junction transistor designed for industrial and electronic applications requiring reliable switching and amplification. It features robust electrical characteristics suitable for medium power amplification and general-purpose switching tasks. This transistor ensures consistent performance across a wide range of operating conditions, making it an ideal choice for engineers needing stable, efficient semiconductor components. Available in a standardized package, it supports seamless integration into complex circuits. For detailed sourcing and technical assistance, visit IC Manufacturer.
2N3499UB/TR Key Features
- High current handling capability: Enables efficient switching and amplification in medium power applications, ensuring robust circuit performance.
- Low saturation voltage: Reduces power loss during operation, improving overall energy efficiency in electronic designs.
- Wide operating voltage range: Provides flexibility for diverse industrial environments without compromising reliability.
- Enhanced thermal stability: Supports consistent operation over varying temperature ranges, increasing device longevity and operational safety.
2N3499UB/TR Technical Specifications
| Parameter | Specification |
|---|---|
| Transistor Type | NPN Bipolar Junction Transistor |
| Collector-Emitter Voltage (VCEO) | 60 V |
| Collector Current (IC) | 3 A |
| Power Dissipation (Ptot) | 30 W |
| DC Current Gain (hFE) | 40 to 160 |
| Transition Frequency (fT) | 30 MHz |
| Package Type | TO-220 |
| Operating Junction Temperature (Tj) | -65 to +150??C |
2N3499UB/TR Advantages vs Typical Alternatives
This transistor provides superior current handling and power dissipation compared to many standard NPN devices, offering enhanced operational reliability in demanding industrial environments. Its low saturation voltage and high gain deliver efficient performance, reducing energy loss and improving circuit stability. The robust TO-220 package ensures effective thermal management, making this transistor a preferred choice for engineers seeking durable and efficient semiconductor solutions.
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Typical Applications
- Power switching and amplification in industrial control systems, providing reliable operation under varying electrical loads and temperatures.
- Audio frequency amplification circuits requiring medium power output with low distortion.
- Voltage regulation and power supply stabilization in electronic devices.
- General-purpose switching in automotive and industrial electronics where high current capacity and thermal stability are essential.
2N3499UB/TR Brand Info
The 2N3499UB/TR is produced by a globally recognized semiconductor manufacturer known for delivering high-quality, reliable transistor solutions. This product line is engineered to meet rigorous industry standards, ensuring consistent performance and durability. The brand emphasizes precision manufacturing and thorough testing to support complex industrial and electronic applications, positioning this transistor as a dependable component for engineers and sourcing specialists worldwide.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating is 3 amperes, allowing the device to handle medium power loads safely without risking thermal or electrical failure.
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In what package is this transistor supplied?
This transistor is supplied in a TO-220 package, which facilitates efficient heat dissipation and easy mounting onto heat sinks for improved thermal management.
What voltage levels can this transistor operate at?
The collector-emitter voltage rating is 60 volts, enabling the transistor to operate effectively within moderate voltage circuits typical in industrial and control applications.
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How does the transistor’s gain affect circuit performance?
The DC current gain (hFE) ranges from 40 to 160, providing amplification flexibility, which helps optimize the transistor??s switching or amplification role in various circuit designs.
Is this transistor suitable for high-temperature environments?
Yes, the device operates reliably within a junction temperature range of -65??C to +150??C, making it suitable for applications exposed to wide temperature variations.
