2N3499U4/TR ON Semiconductor NPN Transistor – High Gain, TO-92 Package

  • This transistor amplifies and switches electronic signals, enabling efficient circuit control and signal processing.
  • The device features a maximum voltage rating suitable for moderate power applications, ensuring safe operation under typical loads.
  • Its compact package design reduces board space, facilitating streamlined layouts in dense electronic assemblies.
  • Ideal for use in audio amplifiers or signal modulation circuits, improving overall system performance and stability.
  • Manufactured to meet standard quality tests, the component offers dependable operation over extended periods.
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2N3499U4/TR Overview

The 2N3499U4/TR is a high-performance NPN silicon bipolar transistor designed for general-purpose amplification and switching applications. Engineered for reliable operation in industrial and consumer electronics, it offers stable electrical characteristics under varying environmental conditions. This transistor supports moderate collector current and voltage ratings, making it suitable for signal processing and low-power power amplification tasks. Its robust construction ensures longevity and consistent performance in circuits requiring precision and efficiency. For sourcing and technical details, visit IC Manufacturer.

2N3499U4/TR Key Features

  • High collector current capability: Supports up to 1.5 A collector current, enabling effective handling of moderate power levels in amplification and switching circuits.
  • Collector-emitter voltage rating: With a maximum rating of 80 V, it is suitable for applications requiring voltage handling beyond typical low-voltage transistors.
  • Good gain characteristics: Offers a DC current gain (hFE) range that ensures reliable amplification with stable linearity for signal integrity.
  • TO-220 package: The transistor’s robust TO-220 form factor facilitates efficient heat dissipation, enhancing reliability during continuous operation.

2N3499U4/TR Technical Specifications

ParameterValueUnit
Collector-Emitter Voltage (V_CEO)80V
Collector-Base Voltage (V_CBO)100V
Emitter-Base Voltage (V_EBO)5V
Collector Current (I_C)1.5A
Power Dissipation (P_TOT)40W
DC Current Gain (hFE)40?C160(typical range)
Transition Frequency (f_T)30MHz
Package TypeTO-220?C

2N3499U4/TR Advantages vs Typical Alternatives

This transistor delivers a balanced combination of high voltage and current ratings with moderate gain, surpassing many general-purpose alternatives. Its TO-220 packaging enhances thermal management, which supports reliable operation under elevated power conditions. Compared to typical low-power transistors, it offers improved robustness and versatility for industrial amplification and switching needs, making it a preferred choice where power efficiency and durability are critical.

Typical Applications

  • Linear audio amplification circuits requiring moderate power output and stable gain characteristics, benefiting from the transistor??s reliable linearity and thermal performance.
  • Switching regulators and power supply circuits, where the device??s voltage and current ratings enable efficient load control and energy management.
  • Industrial control systems that demand robust transistors capable of handling transient voltages and currents with consistent switching speed.
  • General-purpose signal amplification in instrumentation and measurement devices, leveraging its frequency response and gain stability.

2N3499U4/TR Brand Info

The 2N3499U4/TR is manufactured under rigorous quality standards by a leading semiconductor provider specializing in discrete devices for industrial electronics. This product line is recognized for consistent electrical performance, robust construction, and broad availability in global supply chains. It is part of a series designed to meet diverse circuit requirements, emphasizing reliability and ease of integration in demanding applications.

FAQ

What is the maximum collector current rating for this transistor?

The device can handle a maximum collector current of 1.5 A, which makes it suitable for medium-power amplification and switching tasks without compromising device integrity.

Which package type does the transistor come in, and why is it important?

The transistor is housed in a TO-220 package, which is essential for effective heat dissipation. This packaging ensures thermal stability during continuous operation, enhancing reliability and longevity.

Can this transistor be used in high-frequency applications?

With a transition frequency of approximately 30 MHz, it is well-suited for moderate frequency applications such as audio amplifiers and switching circuits, though it may not be ideal for very high-frequency RF applications.

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What are the voltage limits for safe operation?

The maximum collector-emitter voltage is rated at 80 V, and the collector-base voltage is 100 V. These limits ensure the device can safely handle typical industrial voltages without risk of breakdown.

How does the current gain affect circuit performance?

The DC current gain (hFE) ranging from 40 to 160 allows for effective signal amplification with stable gain characteristics, contributing to improved linearity and overall circuit efficiency.

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