2N3439UA-Transistor NPN RF Amplifier Transistor in TO-66 Metal Can Package by Texas Instruments

2N3439UA-Transistor Overview

The 2N3439UA is a silicon NPN transistor specifically designed for high-frequency applications, offering consistent performance in RF amplification and oscillator circuits. Its rugged construction ensures reliable operation under demanding conditions, making it ideal for industrial and communication equipment. The device features low noise and high gain characteristics, supporting efficient signal processing and amplification. With its robust voltage and current ratings, the 2N3439UA transistor delivers stable operation in both linear and switching modes. Engineers and sourcing specialists value this transistor for its proven reliability and compatibility with a wide range of analog circuit designs. For more detailed information, visit the IC Manufacturer website.

2N3439UA-Transistor Technical Specifications

2N3439UA-Transistor Key Features

• High transition frequency: Enables effective operation in VHF and UHF applications, maximizing signal amplification performance.
• Low noise figure: Reduces signal distortion, critical for sensitive RF receiver front-end stages.
• Robust power handling: Supports dissipation up to 400 mW, ensuring reliable performance under thermal stress.
• Wide gain range: Provides design flexibility for both low and moderate gain circuit requirements.
• Durable TO-18 package: Offers excellent thermal conductivity and mechanical protection for enhanced reliability.

Typical Applications

• RF amplifier stages in communication equipment where low noise and high gain are essential for signal clarity and strength.
• Oscillator circuits requiring stable frequency response and consistent transistor parameters.
• Intermediate frequency (IF) amplifiers in radio receivers benefiting from the transistor??s low noise and high frequency capability.
• General-purpose switching and amplification in industrial control systems demanding dependable transistor operation.

2N3439UA-Transistor Advantages vs Typical Alternatives

This transistor stands out for its high-frequency performance combined with a low noise figure, which surpasses many typical low-frequency transistors. Its robust power dissipation and wide gain range provide engineers with flexible design options and improved reliability. Compared to alternative devices, it offers a balanced mix of sensitivity, power handling, and integration ease in RF and general-purpose analog circuits.

2N3439UA-Transistor Brand Info

The 2N3439UA transistor is a well-established product originally developed by various semiconductor manufacturers specializing in discrete components. It is widely available from multiple reputable sources known for quality and reliability in the RF transistor segment. Manufactured with precision doping processes and stringent quality controls, it is recognized for consistent electrical characteristics and long-term durability in industrial and communications applications. The device??s TO-18 metal can package reflects the traditional approach to high-frequency transistor design, providing superior thermal performance and mechanical stability.

FAQ

What is the maximum collector current rating of the 2N3439UA transistor?

The maximum collector current for this transistor is 100 mA. This rating ensures that the device can handle moderate current loads typical in RF and low-power amplification circuits without damage or performance degradation.

Can the 2N3439UA transistor be used in high-frequency oscillator circuits?

Yes, with a transition frequency of approximately 200 MHz, this transistor is well-suited