2N3439U4-Transistor NPN RF Amplifier Transistor in TO-39 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling improved control in electronic circuits.
  • Its voltage rating ensures stable operation under varying electrical loads, enhancing performance.
  • The compact package design offers efficient board-space usage for streamlined device layouts.
  • Ideal for switching applications, it helps manage power delivery effectively in complex systems.
  • Manufactured with consistent quality standards to ensure long-term reliability in diverse environments.
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2N3439U4-Transistor Overview

The 2N3439U4 is an N-channel Junction Field Effect Transistor (JFET) designed for high-frequency amplification and switching applications. With its robust voltage handling capability and low noise characteristics, this transistor is ideal for RF circuits, analog signal processing, and buffer stages. It offers stable performance across a broad range of operating conditions, ensuring consistent gain and minimal distortion. Engineers and sourcing specialists rely on this component for its reliable electrical characteristics and compatibility in industrial and communication system designs. For more detailed technical resources, visit IC Manufacturer.

2N3439U4-Transistor Technical Specifications

ParameterValueUnit
TypeN-Channel JFET?C
Drain-Source Voltage (VDS)30V
Gate-Source Cutoff Voltage (VGS(off))-0.6 to -4.0V
Drain Current (ID)20mA
Power Dissipation (PD)310mW
Input Capacitance (Ciss)3pF
Pinch-Off Voltage (Vp)-4.0 to -8.0V
Operating Temperature Range-65 to +200??C

2N3439U4-Transistor Key Features

  • High voltage tolerance: Supports up to 30 V drain-source voltage, enabling use in moderately high voltage signal stages.
  • Low gate leakage current: Minimizes power loss and noise, improving circuit sensitivity and stability in RF applications.
  • Wide operating temperature range: Reliable performance from -65 ??C to +200 ??C ensures suitability for harsh industrial environments.
  • Low input capacitance: Enhances high-frequency response, making it ideal for RF amplifiers and mixers.

Typical Applications

  • RF Amplifiers: Utilized in radio frequency amplifier circuits for signal gain with minimal distortion and noise, supporting telecommunications and broadcasting equipment.
  • Switching circuits: Efficiently switches analog signals in industrial control and measurement systems.
  • Buffer stages: Provides impedance matching and isolation in analog signal processing chains.
  • Oscillators and mixers: Used in frequency generation and conversion circuits within communication devices.

2N3439U4-Transistor Advantages vs Typical Alternatives

This transistor offers superior low noise characteristics and low input capacitance compared to typical alternatives, enhancing sensitivity and signal integrity in RF applications. Its wide temperature tolerance and reliable voltage handling provide robustness in industrial settings. The device??s stable electrical parameters reduce the need for complex compensation circuits, streamlining integration into existing designs.

2N3439U4-Transistor Brand Info

The 2N3439U4 transistor is a product historically manufactured by several semiconductor companies specializing in discrete components, including ON Semiconductor and Vishay. These manufacturers are recognized for delivering high-quality JFET devices suitable for demanding analog and RF applications. The transistor is widely available through authorized distributors, ensuring traceability and compliance with industry standards. Its proven track record in industrial and communication electronics positions it as a trusted component in precision amplifier and switching designs.

FAQ

What type of transistor is the 2N3439U4?

The 2N3439U4 is an N-channel Junction Field Effect Transistor (JFET), designed primarily for amplification and switching at radio frequencies. It operates by controlling current flow through a voltage applied to the gate terminal, offering high input impedance and low noise.

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