2N3439P-Transistor-PIND by 2N Brand – High-Frequency NPN Transistor, TO-18 Package

2N3439P-Transistor-PIND Overview

The 2N3439P transistor is a high-performance PIND (Post-Ion Implantation Defect) transistor designed for reliable operation in RF and microwave circuits. Engineered with a silicon planar structure, it offers superior frequency response and low noise characteristics, making it ideal for amplification and switching applications. Its robust construction ensures consistent electrical performance under demanding industrial conditions. This device is well-suited for engineers and sourcing specialists seeking a dependable component for high-frequency signal processing. For comprehensive technical details and sourcing options, visit IC Manufacturer.

2N3439P-Transistor-PIND Key Features

• High-frequency operation: Enables efficient amplification in VHF/UHF bands, improving signal integrity in communication systems.
• Low noise figure: Ensures minimal signal distortion, critical for sensitive RF front-end circuits.
• Robust thermal stability: Maintains consistent performance over a wide temperature range, enhancing reliability in industrial environments.
• Planar silicon construction: Facilitates integration into compact circuit designs with superior electrical characteristics.

2N3439P-Transistor-PIND Technical Specifications

Parameter	Value	Unit
Type	N-Channel JFET	?C
Drain-Source Voltage (Vds)	30	V
Gate-Source Voltage (Vgs)	-25 to 0	V
Drain Current (Id)	30	mA
Power Dissipation (Pd)	400	mW
Transition Frequency (ft)	400	MHz
Noise Figure	2.0	dB
Package Type	TO-18 Metal Can	?C

2N3439P-Transistor-PIND Advantages vs Typical Alternatives

This transistor delivers superior high-frequency performance and lower noise compared to typical silicon planar JFETs, enhancing signal clarity in RF applications. Its robust thermal and electrical characteristics provide enhanced reliability under industrial operational stresses. The compact TO-18 package supports easy integration, making it a preferred choice for precision amplification and switching tasks over standard transistor alternatives.

Typical Applications

• RF amplifiers in communication equipment requiring low noise and high-frequency gain, ensuring signal fidelity in wireless systems.
• Oscillator circuits benefiting from stable gain and frequency response at VHF/UHF bands.
• Switching devices in analog signal processing where fast response and low distortion are critical.
• Sensor interface circuits that demand consistent performance under varying thermal conditions.

2N3439P-Transistor-PIND Brand Info

The 2N3439P transistor is a product designed by established semiconductor manufacturers specializing in high-reliability discrete components. The brand is recognized for delivering rugged, high-frequency transistors with consistent electrical performance. This specific model is known within the industry for its use in RF and microwave applications, providing engineers with a trusted solution for precision amplification and switching tasks in demanding environments.

FAQ

What type of transistor is the 2N3439P-Transistor-PIND?

The 2N3439P is an N-channel Junction Field Effect Transistor (JFET) designed for high-frequency applications, offering low noise and stable gain characteristics suitable for RF circuit designs.

What are the maximum voltage ratings for this device?

This transistor supports a maximum drain-source voltage of 30 volts and a gate-source voltage range from -25 volts to 0 volts, ensuring safe operation within typical RF circuit voltage levels.

What packaging does the 2N3439P come in?

The device is housed in a TO-18 metal can package, which provides excellent thermal dissipation and mechanical protection, facilitating easy mounting in industrial and communication equipment.

Can this transistor be used in oscillator circuits?

Yes, due to its stable frequency response and low noise figure, it is well-suited for use in oscillator circuits operating in VHF and UHF frequency ranges.

What makes this transistor suitable for industrial environments?

Its robust thermal stability and reliable electrical characteristics under varying temperature conditions make it ideal for industrial applications that demand consistent performance and durability.