2N3419-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

2N3419-Transistor Overview

The 2N3419 is a high-performance NPN silicon transistor designed for low-noise and high-frequency amplification applications. It offers reliable switching and amplification capabilities, making it ideal for RF, audio, and analog circuit designs. With a maximum collector current rating of 100mA and a transition frequency (fT) up to 100MHz, this transistor provides robust performance in demanding industrial environments. Its compact TO-18 metal can package ensures excellent thermal stability and durability. Engineers and sourcing specialists can trust this device for consistent gain and low noise figure in various electronic applications. For more details and sourcing options, visit IC Manufacturer.

2N3419-Transistor Technical Specifications

2N3419-Transistor Key Features

• High transition frequency up to 100 MHz: Enables excellent performance in RF amplification and high-speed switching circuits.
• Low noise figure: Critical for minimizing signal degradation in sensitive analog and RF designs.
• Robust power dissipation rating of 400 mW: Supports reliable operation under moderate power conditions without thermal failure.
• Wide DC current gain range (hFE 40?C300): Provides flexibility in circuit design for varying gain requirements.

Typical Applications

• RF Amplifiers: Ideal for low-noise signal amplification in radio frequency stages, improving signal clarity and strength in communication systems.
• Audio Preamplifiers: Suitable for boosting low-level audio signals with minimal distortion, enhancing sound quality in audio devices.
• Switching Circuits: Used in moderate power switching applications requiring fast response times and reliable operation.
• Analog Signal Processing: Effective in analog circuits for amplification and buffering roles, supporting precise signal control.

2N3419-Transistor Advantages vs Typical Alternatives

This transistor offers a compelling combination of high-frequency response and low noise, making it superior for RF and audio applications compared to typical low-frequency or general-purpose transistors. Its metal can package enhances thermal management and reliability under industrial conditions. Additionally, the broad current gain range allows for versatile circuit integration, providing engineers with enhanced design flexibility and improved signal integrity.

2N3419-Transistor Brand Info

The 2N3419 transistor is a widely recognized and standardized device originally introduced by multiple semiconductor manufacturers including Texas Instruments and ON Semiconductor. It has become a staple in the electronics industry due to its reliable performance, availability, and well-documented characteristics. This transistor is often sourced from reputable suppliers who ensure quality compliance with JEDEC standards, making it a trusted component in industrial, communications, and consumer electronics manufacturing.

FAQ

What is the maximum collector current for this transistor?

The maximum collector current rating for this transistor is 100 milliamps (mA). This rating defines the highest continuous current the device can safely handle without damage under specified operating conditions.

Can this transistor be used for RF applications?

Yes, with a transition frequency of up to 100 MHz and low noise characteristics, this transistor is well-suited for RF amplification and signal processing applications where minimal noise and high gain are essential.

What package type does this transistor come in?

This transistor is housed in a TO-18 metal can package, which provides excellent thermal conductivity and mechanical durability, enhancing reliability in demanding environments.