2N3418-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by Motorola

  • This transistor amplifies electrical signals, enabling precise control in analog circuits and switching applications.
  • Its frequency response supports efficient operation at high speeds, essential for communication and signal processing.
  • The device features a compact package, allowing for space-saving designs on densely populated circuit boards.
  • Commonly used in audio amplifiers, it helps improve sound quality by providing stable gain and low distortion.
  • Manufactured to meet industry standards, this transistor offers consistent performance and long-term reliability.
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2N3418-Transistor Overview

The 2N3418 transistor is a versatile NPN bipolar junction transistor widely used in low-noise amplifier circuits and general-purpose switching applications. It features a robust design optimized for medium power amplification with a maximum collector current of 100 mA and a collector-emitter voltage rating up to 45 V. Known for its low noise figure and stable gain characteristics, it is ideal for signal processing tasks in industrial and communication electronics. Engineered for reliable performance in various environments, this transistor is a dependable choice for engineers seeking precision and efficiency in analog and switching circuits. For detailed sourcing, visit IC Manufacturer.

2N3418-Transistor Technical Specifications

Parameter Value
Type NPN Bipolar Junction Transistor
Collector-Emitter Voltage (VCEO) 45 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 100 mA
Power Dissipation (Ptot) 500 mW
DC Current Gain (hFE) 40 to 300
Transition Frequency (fT) 100 MHz (typical)
Package Type TO-18 Metal Can

2N3418-Transistor Key Features

  • Low Noise Performance: Ensures minimal signal distortion, ideal for audio and RF amplification circuits.
  • Moderate Power Handling: Supports collector currents up to 100 mA, suitable for medium power amplification tasks.
  • Wide Voltage Ratings: Withstands up to 45 V collector-emitter voltage, enabling reliable operation in diverse circuit designs.
  • High Transition Frequency: Approximately 100 MHz frequency response supports high-speed switching and signal processing.

Typical Applications

  • Low-noise preamplifiers in audio and radio frequency amplification circuits, providing clean signal gain with minimal interference.
  • General-purpose switching in industrial control circuits requiring reliable transistor operation within medium power ranges.
  • Signal processing stages in communication devices where stable gain and low noise are critical for performance.
  • Analog amplification in sensor interfacing circuits for precise signal conditioning and measurement accuracy.

2N3418-Transistor Advantages vs Typical Alternatives

This transistor offers a balanced combination of low noise and moderate power capability, making it advantageous over typical general-purpose transistors that may lack precision in amplification tasks. Its metal can TO-18 package improves thermal dissipation and reliability compared to plastic alternatives. The wide voltage ratings and stable gain ensure consistent performance in sensitive analog and switching applications, providing engineers with a robust and efficient solution for varied industrial electronics needs.

2N3418-Transistor Brand Info

The 2N3418 transistor is a widely recognized industry-standard device originally standardized by JEDEC and produced by multiple semiconductor manufacturers, such as ON Semiconductor, Fairchild Semiconductor (now part of ON Semiconductor), and Texas Instruments. Its consistent performance and availability have made it a staple in analog circuit design and industrial electronics. The TO-18 metal can package is characteristic of quality manufacturing processes ensuring durability and thermal stability, supporting its continued use in legacy and new designs worldwide.

FAQ

What are the maximum voltage ratings for this transistor?

The transistor supports a maximum collector-emitter voltage of 45 V, collector-base voltage of 60 V, and an emitter-base voltage up to 5 V. These ratings ensure it can handle a variety of voltage conditions in typical industrial and communication applications.

Is this transistor suitable for RF amplifier circuits?

Yes, with a transition frequency around 100 MHz and low noise characteristics, this transistor is well-suited for low-noise RF amplifier designs, making it a reliable choice in radio frequency signal amplification.

What is the typical gain range of this transistor?

The DC current gain (hFE) ranges between 40 and 300, allowing for flexibility in amplification applications depending

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