2N335-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by Motorola

  • This transistor amplifies electrical signals, enabling control of current flow in various circuits.
  • It features a specified voltage rating that ensures safe operation under designated electrical conditions.
  • The compact package design helps save board space, facilitating efficient layout in tight electronic assemblies.
  • Commonly used in switching applications, it improves device responsiveness and energy management.
  • Manufactured to meet industry standards, it offers consistent performance and long-term durability.
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2N335-Transistor Overview

The 2N335 is a high-performance NPN bipolar junction transistor widely used in industrial and electronic applications requiring reliable switching and amplification. Known for its robust voltage and current handling capabilities, this transistor offers dependable performance in moderate power amplifier circuits and switching devices. It features a high gain bandwidth and a maximum collector-emitter voltage suitable for various analog and digital designs. The 2N335 transistor is favored in applications demanding stable operation under diverse environmental conditions. For detailed technical data and sourcing, visit IC Manufacturer.

2N335-Transistor Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCEO) 50 V
Collector-Base Voltage (VCBO) 60 V
Emitter-Base Voltage (VEBO) 5 V
Collector Current (IC) 1 A
Power Dissipation (Ptot) 30 W
DC Current Gain (hFE) 40 to 300 ?C
Transition Frequency (fT) 40 MHz
Junction Temperature (Tj) 200 ??C

2N335-Transistor Key Features

  • High voltage tolerance: Supports collector-emitter voltages up to 50 V, enabling use in moderate power switching circuits.
  • Wide current handling range: Capable of continuous collector currents up to 1 A, suitable for robust amplifier stages and load driving.
  • Variable gain: DC current gain ranging from 40 to 300 allows design flexibility across different amplification requirements.
  • Thermal reliability: Junction temperature rating up to 200??C ensures stable operation under elevated thermal conditions.

Typical Applications

  • Power amplifier circuits in audio and RF domains where moderate power and linear amplification are required, leveraging the transistor??s gain and voltage ratings.
  • Switching devices in industrial control systems, benefiting from the transistor??s ability to handle up to 1 A collector current efficiently.
  • Driver stages for relays and solenoids, providing reliable operation in electromechanical interfaces.
  • Signal processing circuits in instrumentation and measurement equipment, where stable gain and frequency response are necessary.

2N335-Transistor Advantages vs Typical Alternatives

This transistor offers a strong combination of voltage handling, current capacity, and gain variability, making it a preferred choice over many general-purpose transistors. Its ability to sustain higher junction temperatures enhances reliability in harsh environments. Compared to typical alternatives, it provides improved power dissipation and frequency response, enabling more efficient and accurate amplification and switching in industrial applications.

2N335-Transistor Brand Info

The 2N335 transistor is a classic semiconductor device originally developed by major manufacturers such as Motorola and Fairchild Semiconductor, now widely produced by various global suppliers. It is recognized for its rugged construction and consistent performance in industrial electronics. This transistor remains a staple component in many legacy and ongoing designs due to its proven reliability and availability from multiple trusted semiconductor distributors.

FAQ

What is the maximum collector current rating for the 2N335 transistor?

The maximum continuous collector current for this device is 1 ampere. This allows it to operate effectively in moderate power amplification and switching applications without exceeding its thermal limits.

Can the 2N335 transistor be used for high-frequency applications?

With a transition frequency of approximately 40 MHz, this transistor is suitable for moderate frequency applications including RF and audio amplifiers

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