2N3250AUB-Transistor Overview
The 2N3250AUB transistor is a high-performance bipolar junction transistor (BJT) designed for medium power amplification and switching applications. This device offers a robust collector current rating and reliable gain characteristics, making it ideal for industrial and automotive electronics. Engineered for durability and consistent electrical performance, it supports stable operation under varying temperature and load conditions. Its design suits engineers and sourcing specialists seeking dependable transistor components for power regulation, signal amplification, and general-purpose switching tasks. The 2N3250AUB combines efficiency with ease of integration in diverse circuit environments. For detailed manufacturing and supply information, visit IC Manufacturer.
2N3250AUB-Transistor Key Features
- High Collector Current Capability: Supports substantial current flow, enabling effective power control in demanding circuits.
- Stable DC Current Gain (hFE): Ensures predictable amplification, critical for signal integrity and circuit stability.
- Robust Voltage Ratings: Withstands high collector-emitter voltages, enhancing reliability in power switching applications.
- Thermal Stability: Designed to maintain performance over a wide temperature range, reducing failure rates in industrial environments.
2N3250AUB-Transistor Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Collector-Emitter Voltage (VCEO) | 80 | V |
| Collector-Base Voltage (VCBO) | 100 | V |
| Emitter-Base Voltage (VEBO) | 5 | V |
| Collector Current (IC) | 5 | A |
| DC Current Gain (hFE) | 20 to 70 | ?C |
| Power Dissipation (Ptot) | 75 | W |
| Transition Frequency (fT) | 3 | MHz |
| Junction Temperature (Tj) | 150 | ??C |
2N3250AUB-Transistor Advantages vs Typical Alternatives
This transistor offers superior current handling and voltage endurance compared to many general-purpose BJTs, delivering improved reliability in power amplification and switching roles. Its stable gain across operating conditions results in enhanced circuit predictability and efficiency. The combination of high power dissipation capacity and thermal stability reduces the risk of thermal runaway, making it a dependable choice for rigorous industrial applications where consistent performance is critical.
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Typical Applications
- Medium power linear amplifiers in audio and industrial control systems, benefiting from its stable gain and high current capability.
- Switching regulators and power converters requiring robust voltage and current handling.
- Automotive electronics where durability under varying temperature and load conditions is essential.
- General-purpose amplification and switching in industrial automation circuits.
2N3250AUB-Transistor Brand Info
The 2N3250AUB transistor is produced by a leading semiconductor manufacturer known for precision-engineered electronic components. This product line emphasizes quality and consistency, ensuring that each transistor meets stringent performance and reliability standards. The 2N3250AUB is part of a comprehensive portfolio tailored for industrial, automotive, and commercial applications, backed by detailed datasheets and technical support to assist engineers and procurement teams.
FAQ
What is the maximum collector current for this transistor?
The maximum collector current rating is 5 amperes, allowing the device to handle medium power loads efficiently while maintaining stable operation in various circuit designs.
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Can this transistor be used in high-frequency applications?
With a transition frequency (fT) of approximately 3 MHz, this transistor is suitable for moderate frequency applications but may not be ideal for very high-frequency RF circuits.
What voltage levels can the 2N3250AUB transistor tolerate?
This transistor supports a collector-emitter voltage of up to 80 V and a collector-base voltage of 100 V, making it suitable for many industrial and automotive environments requiring robust voltage endurance.
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How does the device perform under thermal stress?
The transistor is rated for a maximum junction temperature of 150??C, providing good thermal stability and reducing the risk of damage or performance degradation in high-temperature operating conditions.
What is the typical DC current gain range for this transistor?
The DC current gain (hFE) ranges between 20 and 70, allowing for consistent signal amplification and facilitating predictable circuit performance in both switching and linear applications.
